Characterization and Comparison of GaAs/AlGaAs Uni-Traveling Carrier and Separated-Transport-Recombination Photodiode Based High-Power Sub-THz Photonic Transmitters

Li, Yutai; Shi, Jin‐Wei; Huang, Chih-Ai; Chen, Nan-Wei; Chen, Shuhan; Chyi, Jen‐Inn; Wang, Yichao; Yang, C. C.; Pan, Ci‐Ling

doi:10.1109/jqe.2009.2023366

Cited by 9 publications

(5 citation statements)

References 38 publications

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“…Alternative PD structures, such as the separated-transport recombination PD, have been demonstrated as THz emitters as well. 66 A recent review of high-power radiofrequency and THz PDs can be found in Ref. 67.…”

Section: Optoelectronicmentioning

confidence: 99%

Review of terahertz and subterahertz wireless communications

Federici

Moeller²

2010

Journal of Applied Physics

1,016

445

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According to Edholm's law, the demand for point-to-point bandwidth in wireless short-range communications has doubled every 18 months over the last 25 years. It can be predicted that data rates of around 5-10 Gb/s will be required in ten years. In order to achieve 10 Gb/s data rates, the carrier frequencies need to be increased beyond 100 GHz. Over the past ten years, several groups have considered the prospects of using sub-terahertz ͑THz͒ and THz waves ͑100-2000 GHz͒ as a means to transmit data wirelessly. Some of the reported advantages of THz communications links are inherently higher bandwidth compared to millimeter wave links, less susceptibility to scintillation effects than infrared wireless links, and the ability to use THz links for secure communications. Our goal of this paper is to provide a comprehensive review of wireless sub-THz and THz communications.

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Section: Optoelectronicmentioning

confidence: 99%

Review of terahertz and subterahertz wireless communications

Federici

Moeller²

2010

Journal of Applied Physics

1,016

445

View full text Add to dashboard Cite

show abstract

“…Alternative photodiode structures, such as the Separated-Transport Recombination photodiode (STR-PD), have been demonstrated as THz emitters as well. 55 A recent review of high-power radiofrequency and THz photodiodes can be found in Reference 56. Variations in the optical frequency comb technique enable the generation of either multiple sub-THz frequencies or single frequencies. For example, a photomixing geometry can be used.…”

Section: Opto-electronicmentioning

confidence: 99%

Terahertz wireless communications

Federici

Moeller²,

2013

Handbook of Terahertz Technology for Imaging, Sensing and Communications

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“…Due to the high resistivity and extremely short carrier trapping time (~200 fs) of LTGGaAs, carrier drift time, dark current and depletion layer thickness are of considerably less importance for the construction of high-power, highspeed LTG-GaAs-based photodiodes. LTG-GaAs-based metal-semiconductor-metal photodiodes [62][63][64], photoconductive dipole antennas (PDAs) [8,65,66], and p-i-n photodiodes [59,67] with extremely high saturation peak output power and wide O-E bandwidth have been demonstrated. High-power LTG-GaAs-based photodiodes have been used with planar-circuit broadside antennas, including planar dipole, slot and spiral antennas [68].…”

Section: Millimeter-wave Photonic Transmittersmentioning

confidence: 99%

“…A silicon lens is usually integrated onto the substrate of the photomixer in order to minimize the substrate mode problem and enhance the radiating power (efficiency) of these integrated broadside antennas, which are designed to operated in the near-THz frequency regime [24,68]. Significantly higher CW and pulse THz output power has been reported for LTG-GaAs-based photomixers compared with that achieved by traditional p-i-n photodiodes [59,67]. Figure 5(a) shows an LTG-GaAs-based photomixer module with an integrated spiral antenna and a silicon-substrate lens for THz frequencies [68], and Figure 5(b) shows the measured frequency response of such an LTG-GaAs photomixer integrated with another slot antenna.…”

Section: Millimeter-wave Photonic Transmittersmentioning

confidence: 99%

Millimeter-wave photonic wireless links for very high data rate communication

2011

Self Cite

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T he most useful wireless communication band is located in the frequency range of 0.3-3.5 GHz for reasons of compact antenna size, low propagation loss and good penetration through buildings [1]. However, wireless carrier frequencies are being pushed higher due to emerging high-bandwidth applications, which include next-generation smart cell phones [1] and wireless linking for three-dimensional super high-definition television [2]. As a result, the millimeter-wave (MMW) bands at 60 (V-band), 120 (D-band) and even higher than 300 GHz are beginning to attract attention due to their 'unlicensed' usage [2][3][4][5][6][7][8].Several key front-end components have been developed employing the already mature silicon-based complementary metal-oxide-semiconductor (CMOS) integrated-circuit (IC) technology for wireless communication in the V (50-75 GHz) and W (75-110 GHz) bands or even higher operating frequencies for wireless communication [9]. Recently, a 60 GHz CMOS transceiver module [10] and system comprised of antennas, 60 GHz power amplifiers, local oscillators and baseband ICs has been commercially developed by SiBEAM (USA). In addition, advanced InP-based high electron mobility transistors (InP-HEMTs) and heterojunction bipolar transistors have been used to develop some high-speed ICs and key components that operate at 125 GHz [11,12] or greater than 300 GHz [13,14] for >1 Gbit s -1 wireless communication systems.However, MMW signals suffer substantial propagation loss in free space [8]. This problem and their inherent straight-line path of propagation affect connections and synchronization between the different parts of the whole communication system [15]. A promising solution to overcome this problem is the radio-over-fiber (RoF) technique [3,4,16,17], in which the MMW local-oscillator signal and data are both distributed through a low-loss optical fiber and only radiated over the last mile to the end user. Figure 1 shows a schematic representation of this approach, illustrating the motivation and working principles of two MMW-over-fiber communication systems. Figure 1(a) shows the additional electrical-to-optical (E-O) and optical-to-electrical (O-E) conversion processes used in the central office and base station, respectively. The optical MMW signal is distributed remotely through a low-loss fiber from the central office to several base stations, effectively eliminating the huge propagation loss of the MMW signal that occurs in an electrical transmission line or free space.

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Characterization and Comparison of GaAs/AlGaAs Uni-Traveling Carrier and Separated-Transport-Recombination Photodiode Based High-Power Sub-THz Photonic Transmitters

Cited by 9 publications

References 38 publications

Review of terahertz and subterahertz wireless communications

Review of terahertz and subterahertz wireless communications

Terahertz wireless communications

Millimeter-wave photonic wireless links for very high data rate communication

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