Characterization and control of energetic deposits from hexachlorodisilane in process tool exhaust lines

Nguyen, Thanh-Trung; Lin, Yu-Jhen; Chin, Mo-Geng; Wang, Cheng-Chieh; Tsai, Hsiao-Yun; Chen, Jenq-Renn; Ngai, Eugene Y.; Chacon, Jennyfer; Franzi, Albert; Fifield, Christian; Baylor, Jason; Marci, John; Bitner, Justin; Prettyman, K. M.; Ferrera, Nicholas; Jordon, William; Szekeres, Trevor

doi:10.1016/j.jlp.2020.104127

Cited by 3 publications

(1 citation statement)

References 39 publications

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“…The partial replacement of Cl atoms by H atoms also increases the polarity of the molecule to enhance dipole−dipole interaction with substrate surface polar groups and could simultaneously: (i) lead to higher electron density on the Cl atoms, thus enhancing the reactivity of the Si−Cl bonds, and (ii) generate an alternate precursor adsorption and reaction pathway via Si−H bond cleavage. 60 The reviewers also note that in the case of the disilanes, there is a tendency for these materials to develop explosive hydrolysis gels in practice, 96,97 with published and private industry communications suggesting that pentachlorodisilane has a higher propensity to form such dangerous species than hexachlorodisilane. 6.…”

Section: Solar Cells and Optical Waveguidesmentioning

confidence: 99%

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications

Kaloyeros¹,

Pan

Goff

et al. 2020

ECS J. Solid State Sci. Technol.

101

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Accelerating interest in silicon nitride thin film material system continues in both academic and industrial communities due to its highly desirable physical, chemical, and electrical properties and the potential to enable new device technologies. As considered here, the silicon nitride material system encompasses both non-hydrogenated (SiNx) and hydrogenated (SiNx:H) silicon nitride, as well as silicon nitride-rich films, defined as SiNx with C inclusion, in both non-hydrogenated (SiNx(C)) and hydrogenated (SiNx:H(C)) forms. Due to the extremely high level of interest in these materials, this article is intended as a follow-up to the authors’ earlier publication [A. E. Kaloyeros, F. A. Jové, J. Goff, B. Arkles, Silicon nitride and silicon nitride-rich thin film technologies: trends in deposition techniques and related applications, ECS J. Solid State Sci. Technol., 6, 691 (2017)] that summarized silicon nitride research and development (R&D) trends through the end of 2016. In this survey, emphasis is placed on cutting-edge achievements and innovations from 2017 through 2019 in Si and N source chemistries, vapor phase growth processes, film properties, and emerging applications, particularly in heterodevice areas including sensors, biointerfaces and photonics.

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Section: Solar Cells and Optical Waveguidesmentioning

confidence: 99%

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications

Kaloyeros¹,

Pan

Goff

et al. 2020

ECS J. Solid State Sci. Technol.

101

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Siemens Reloaded: Chloride‐Assisted Selective Hydrodechlorination of SiCl₄ to HSiCl₃

et al. 2023

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Trichlorosilane is the key intermediate for the large-scale production of polycrystalline silicon in the Siemens and Union Carbide processes. Both processes, however, are highly inefficient, and over two thirds of the trichlorosilane employed is converted to unwanted silicon tetrachloride accumulating in millions of tons per year on a global scale. In this combined experimental and theoretical study we report an energetically and environmentally benign synthetic protocol for the highly selective conversion of SiCl 4 to HSiCl 3 using organohydridosilanes as recyclable hydrogen transfer reagents in combination with onium chlorides as efficient catalysts. We put the same protocol to further use demonstrating the quantitative conversion of higher oligosilane residues, which form as another unwanted and potentially hazardous byproduct of Siemens processes, to HSiCl 3 in a low-temperature recycling step.

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Structural Estimation and Hazard Evaluation of Potentially Explosive Residual Silanes Generated in Semiconductor Manufacturing Processes

Uchida

Uematsu

Iwamoto

et al. 2022

Ind. Eng. Chem. Res.

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We have proposed a scheme to analyze potentially explosive residual silanes (RS) generated in silicon-based semiconductor manufacturing processes in the Yokkaichi Plant, Kioxia Corporation, properly under an inert gas atmosphere. Thermal analysis and ballistic mortar tests revealed that the incomplete hydrolyzed RS poses the highest risk. The mass spectrum suggests that the possible structures of the major components of the RS are cyclic polychlorosilanes with the number of silicon atoms less than 16. A combination of instrumental analyses and theoretical calculations suggest that the hydrolyzed products of the RS involve Si− OH, Si−O−Si, and Si−Si moieties. Theoretical calculations predicted the substantial exergonic processes of a model compound (HO)H 2 Si−SiH 2 (OH) to form a hydroxylsiloxane and H 2 .

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Characterization and control of energetic deposits from hexachlorodisilane in process tool exhaust lines

Cited by 3 publications

References 39 publications

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications

Siemens Reloaded: Chloride‐Assisted Selective Hydrodechlorination of SiCl₄ to HSiCl₃

Structural Estimation and Hazard Evaluation of Potentially Explosive Residual Silanes Generated in Semiconductor Manufacturing Processes

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Characterization and control of energetic deposits from hexachlorodisilane in process tool exhaust lines

Cited by 3 publications

References 39 publications

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: State-of-the-Art Processing Technologies, Properties, and Applications

Siemens Reloaded: Chloride‐Assisted Selective Hydrodechlorination of SiCl4 to HSiCl3

Structural Estimation and Hazard Evaluation of Potentially Explosive Residual Silanes Generated in Semiconductor Manufacturing Processes

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Siemens Reloaded: Chloride‐Assisted Selective Hydrodechlorination of SiCl₄ to HSiCl₃