An infrared CO 2 laser was used for regional heating to study the heating effect on hot filament chemical vapor deposition of diamond-like carbon formation on Si(100) face substrates. The substrate surface temperature was about 450-500 • C. The power of the laser called low, medium, and high raised the temperature of the substrate locally by 25, 45, and 55 • C, respectively. At medium laser power, at the central laser beam region, a narrow Raman peak centered at 1438 cm −1 was detected. It can be concluded that this region has good-quality DLC. This moderate high-frequency peak corresponds to a fourfold-rotation-symmetry atom in an amorphous carbon network from the tight-binding molecular dynamics simulation of Wang and Ho.