Characterization and etching of sputter-deposited absorber films for extreme ultraviolet lithography (EUVL) masks

Racette, Kenneth C.; Williams, Carey T.; Lercel, Michael J.

doi:10.1117/12.458253

Cited by 4 publications

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“…It is so stable that actual etch may apparently stop because of the low volatile product (TaOCl 3 ). The overall reaction in this system can be expressed as: [18][19] . The equilibrium composition was calculated in this study, as shown in Fig.…”

Section: Future Photomask Plasma Etchmentioning

confidence: 99%

Thermodynamic study of photomask plasma etching

2004

SPIE Proceedings

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Photomask plasma etch reactions were studied using Gibbs energy minimization method. The equilibrium compositions were analyzed at practical photomask plasma etch conditions of temperatures, pressures, and reactant inputs. The thermodynamic calculations were based on common gaseous systems used in photomask plasma etching such as Cl 2 -O 2 -He, SF 6 -O 2 -He, and CF 4 -O 2 -He, as well as alternative gases. For Cr etch, the thermodynamically calculated results showed that volatile CrO 2 Cl 2 was the moderate equilibrium composition in the predetermined system only when the temperature was higher than 400 o C, indicating that temperatures of heavy particles in practical plasma conditions might be higher than this temperature. The effects of assistant chemicals on equilibrium compositions were investigated. For MoSi etch, the thermodynamic calculation showed that the main volatile etch products were MoF 6 and SiF 4 . The comparison of MoSi etch using SF 6 and CF 4 was made and gaseous input condition for obtaining all volatile products was found, which would be helpful for defectivity and passivation controls. The calculation also showed that the addition of oxygen in SF 6 and CF 4 systems could increase the equilibrium composition of atomic fluorine, resulting in the etch rate increase. This result agreed with previous hypothesis on the oxygen effects on etch rate. For quartz etch, the calculation showed that the main volatile etch product was SiF 4 . For Ta or TaN absorber EUV mask etch, the volatile Tacontaining product was found to be TaCl 5 .

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Section: Future Photomask Plasma Etchmentioning

confidence: 99%

Thermodynamic study of photomask plasma etching

2004

SPIE Proceedings

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“…During the first half of 2001, the MCoC focus was on development and initial application of process steps required to build masks on 6x6 inch square reticles. Much of this work was reported in a previous paper 4 . During the last several months, many more masks have been fabricated and evaluated.…”

Section: Introductionmentioning

confidence: 94%

“…Chromium films were dc magnetron sputtered with argon gas in a dedicated chamber of the tool. 4 Plate sent to ALS for relectivity measurement of ML and absorber …”

Section: Blanks Buffer and Absorbermentioning

confidence: 99%

“…A reflecting layer has been developed by the EUV-LLC which is composed of 40 alternating pairs of molybdenum and silicon films. Tantalum silicon, tantalum silicon nitride, chromium, tantalum nitride and other materials have been investigated for use as absorber films [1][2][3][4][5] . Silicon oxynitride, silicon dioxide and ruthenium have been used as buffer layers [1][2][3][4][5][6] .…”

Section: Introductionmentioning

confidence: 99%

“…Tantalum silicon, tantalum silicon nitride, chromium, tantalum nitride and other materials have been investigated for use as absorber films [1][2][3][4][5] . Silicon oxynitride, silicon dioxide and ruthenium have been used as buffer layers [1][2][3][4][5][6] . Much additional work needs to be done to optimize mask blank and finished mask fabrication, including development of effective inspection and repair techniques, as well as control of mask flatness during write, measurement and printing.…”

Section: Introductionmentioning

confidence: 99%

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Status of fabrication of square-format masks for extreme-ultraviolet lithography (EUVL) at the MCoC

Racette¹,

Williams²,

Fisch³

et al. 2002

Emerging Lithographic Technologies VI

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Fabricating masks for extreme ultraviolet lithography is challenging. The high absorption of most materials at 13.4 nm and the small critical dimension (45 nm) at the target insertion node force many new features, including reflective mask design, new film choices, and stringent defect specifications. Fabrication of these masks requires the formation and patterning of both a repair buffer layer and an EUV absorber layer on top of a molybdenum/silicon multi-layer substrate.IBM and Photronics have been engaged in developing mask processing technology for x-ray, electron beam projection and extreme ultraviolet lithographies at the Next Generation Lithography Mask Center of Competency (NGL-MCoC) within IBM's mask facility at Essex Junction, Vermont. This paper describes recent results of mask fabrication on 6 x 6 x ¼ inch EUVL substrates (quartz with molybdenum silicon multi-layers) at the MCoC. Masks fabricated with high and low-stress chromium and externally deposited chromium absorber films are compared. In particular, etch characteristics, image size, image placement, line edge roughness, and defect levels are presented and compared. Understanding the influence of the absorber film characteristics on these parameters will enable us to optimize the effectiveness of a given absorber film or to select acceptable alternatives.

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Photomask plasma etching: A review

Wu¹

2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma Photomask plasma etching was thoroughly reviewed over wide topics including history, equipment, etchant, absorbers, phase shifters, thermodynamics, and kinetics. Plasma etch obtained industrial applications for photomask fabrication in the 1990s and presently is a critical fabrication step for the "enabling" photomask industry. Among all types of photomasks ͑binary, embedded attenuated phase-shift mask, and alternating aperture phase-shift mask͒, chromium ͑Cr͒ containing material etching has been the basis and fundamental for all photomask etches. The main technological challenges for Cr etch occur on ͑isolated͒ dark features of a high load photomask due to the etch critical dimension ͑CD͒ bias dependence on the local loading. It determines the CD features on the Cr layer, phase shifter MoSi layer, and fused silica ͑quartz͒ layer. The CD deviation on pattern layers from the nominal value has been a challenge, especially for the Cr state-of-the-art 65 nm node photomasks even though data sizing exists. Inductively coupled plasma plus bias power using radio frequency wavelength is the dominant configuration of the photomask plasma etcher, with improved loading and CD mean-to-target potential. Thermodynamic applications ͑Gibbs energy minimization method͒ on photomask plasma etch provide a quick, easy, and low cost method to estimate the plasma etch feasibility and defect reduction at different plasma gas input conditions. Empirical relationships between operational parameters and etch properties significantly improve the only design of experiment procedure for etch process optimization.

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Characterization and etching of sputter-deposited absorber films for extreme ultraviolet lithography (EUVL) masks

Cited by 4 publications

References 0 publications

Thermodynamic study of photomask plasma etching

Thermodynamic study of photomask plasma etching

Status of fabrication of square-format masks for extreme-ultraviolet lithography (EUVL) at the MCoC

Photomask plasma etching: A review

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