Characterization and Implementation of Hybrid Reverse-Voltage-Blocking and Bidirectional Switches using WBG Devices in Emerging Motor Drive Applications

Dai, Hang; Torres, Renato A.; Jahns, T.M.; Sarlioglu, Bulent

doi:10.1109/apec.2019.8721910

Cited by 33 publications

(4 citation statements)

References 19 publications

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“…More precisely, the hard switching losses P sw = E sw f sw occurring in the 3-Φ inverter can be calculated according to the conventional VI-overlap switching loss model. Considering only the dependency on the switched voltage given by (13) and (14), since the switched current is practically constant, E sw can be approximated with and v v sw sw sw (17) for the case of 3/3-PWM and 2/3-PWM, respectively. The values of k 1 and k 2 in (16) and (17) are determined by the considered operating point (see Table I) and by the switching performance of the power semiconductors employed for the realization of the 3-Φ inverter.…”

Section: B Reduction Of Switching Lossesmentioning

confidence: 99%

“…In contrast, a 3-Φ current DC-link inverter requires six power semiconductors with bidirectional voltage blocking capability, such as, e.g., symmetric GTOs. However, when design constraints demand switching frequencies in the 10~100 kHz range, these switches are preferably realized by anti-series connecting two discrete components, e.g., two power transistors (with external anti-parallel diodes) [14]. This ultimately causes an increase of chip area, cost, driving complexity and conduction losses, which disfavor CSI systems in comparison with VSI systems.…”

Section: Introductionmentioning

confidence: 99%

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Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Guacci¹,

Zhang²,

Tatic³

et al. 2019

CPSS TPEA

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Latest dual-gate (2G) monolithic bidirectional (MB) gallium nitride (GaN) enhancement-mode field effect transistors (e-FETs) enable a performance breakthrough of current DC-link inverters, e.g., in terms of power conversion efficiency, power density, cost and complexity. In fact, a single 2G MB GaN e-FET can replace the two anti-series connected conventional power semiconductors required in this inverter topology, realizing a four-quadrant (AC) switch with bidirectional voltage blocking capability and allowing controlled bidirectional current flow. Furthermore, as shown in this paper in case of three-phase (3-Φ) buck-boost (bB) current source inverter (CSI) systems comprising a DC-link current impressing buck-type DC/DC input stage and a subsequent boost-type 3-Φ current DC-link inverter output stage, a variable DC-link current control strategy, based on aSynergetic Control concept, can be applied to significantly reduce the switching losses occurring in the 3-Φ inverter. This strategy is denominated two-third pulse-width modulation (2/3-PWM), since by properly shaping the DC-link current with the input stage, the desired 3-Φ sinusoidal load phase currents can be generated by switching, in each switching period, only two out of the three phases of the output stage. Based on comprehensive circuit simulations and analytical calculations, a detailed explanation of the developed modulation and control schemes in different operating conditions is provided, and the reduction of losses enabled by 2/3-PWM is confirmed. Next, the seamless transition of the 3-Φ bB CSI system from 2/3-PWM to conventional 3/3-PWM is demonstrated. Finally, a 3.3 kW 3-Φ bB CSI system, applying 2/3-PWM and employing research samples of 2G MB GaN e-FETs in the 3-Φ inverter, is estimated to achieve an efficiency of 98.4% and a power density of 18 kW/dm 3 (295 W/in 3 ) at a switching frequency of 140 kHz. Index Terms-Dual-gate (2G) monolithic bidirectional (MB) gallium nitride enhancement-mode field-effect transistors (e-FETS), three-phase buck-boost current source inverter system, variable DC-link current control. in 2001, all inElectronic Engineering. In 1991, he joined Panasonic Corporation, Osaka, Japan, where he was engaged in the research and development of GaAs HFETs, HBTs, and GaAs MMICs. Since 2003, is involved in the research on GaN-based semiconductor devices. He authored or coauthored more than 60 technical papers in international journals and conference proceedings. He submitted more than 60 patents on semiconductor devices and on their process technologies. His current interest is on GaN-based bidirectional switches and on their applications.

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Section: B Reduction Of Switching Lossesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Guacci¹,

Zhang²,

Tatic³

et al. 2019

CPSS TPEA

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“…But they have not investigated the effect of gate resistances on the switching characteristics of SiC MOSFET based 4-quadrant switch. Using common source configuration, [20] shows the switching characteristics of the 4-quadrant switch by performing double pulse test. But characteristics under several operating conditions are missing.…”

Section: Introductionmentioning

confidence: 99%

Switching Investigation of SiC MOSFET Based 4-Quadrant Switch

Anurag

Nath

2023

IEEE Access

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“…matrix converters, multi-level converters, AC/AC converters), reverse conducting (RC) and reverse blocking (RB) power devices, also known as bidirectional power transistors, with the lowest on-state resistance are required. In this context, monolithic bidirectional power devices have been previously demonstrated [15]- [20], and we report here the first monolithic bidirectional diamond power FET (RC+RB) based on the D3MOSFET design.…”

Section: Introductionmentioning

confidence: 99%

High temperature operation of a monolithic bidirectional diamond switch

Masante

Pernot

Maréchal

et al. 2021

Diamond and Related Materials

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We report the 250 • C operation of a diamond-based monolithic bidirectional switch. A normally-ON double gate deep depletion MOSFET was fabricated with a 400 nm p-type channel with a boron doping of [N AN D ]= 2.3×10 17 cm −3 and an Al 2 O 3 gate oxide thickness of 50 nm. The I st and III rd quadrants transistor characteristics are successfully measured by controlling the channel conductivity with both gates separately, with a clear ON and OFF state. A threshold voltage around 35 V is obtained with a low minimum gate leakage current of 1.00 × 10 −4 mA/mm at a gate-source bias V GS = 50 V. The bidirectional switch is then obtained by operating the MOSFET in the I st quadrant of each gate setup. This first proof of concept offers a reverse conducting and reverse blocking diamond MOSFET, with only one drift region layer.

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Characterization and Implementation of Hybrid Reverse-Voltage-Blocking and Bidirectional Switches using WBG Devices in Emerging Motor Drive Applications

Cited by 33 publications

References 19 publications

Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Three-Phase Two-Third-PWM Buck-Boost Current Source Inverter System Employing Dual-Gate Monolithic Bidirectional GaN e-FETs

Switching Investigation of SiC MOSFET Based 4-Quadrant Switch

High temperature operation of a monolithic bidirectional diamond switch

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