Characterization and Lithographic Performance of Silsesquioxane 193 nm Bilayer Resists

Itô, Hiroshi; Truong, Hoa D.; Burns, Sean; Pfeiffer, Douglas R.; Huang, Wu‐Song; Khojastech, Mahmoud M.; Varanasi, Pushkara Rao; Lercel, Mike

doi:10.2494/photopolymer.18.355

Cited by 5 publications

(2 citation statements)

References 31 publications

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“…Techniques, such as a dissolution rate monitor, 10,15,16 ellipsometry, 17,18 and the quartz crystal microbalance (QCM) [18][19][20][21][22][23] have been employed to measure photoresist dissolution in aqueous solutions. A dissolution rate monitor has been use to monitor high pressure dissolution of fluorinated photoresists, but real time acquisition is limited when CO 2 is initially added to the system and the He-Ne beam scatters.…”

Section: Introductionmentioning

confidence: 99%

Monitoring photoresist dissolution in supercritical carbon dioxide using a quartz crystal microbalance

Zweber

Carbonell

2006

SPIE Proceedings

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New lithographic techniques are being implemented to help further reduce feature sizes in microelectronics. A technique for the development of standard commercial extreme ultraviolet (EUV) photoresists in a carbon dioxide compatible salt (CCS) and supercritical carbon dioxide (scCO 2 ) solution is being investigated to reduce line edge roughness and image collapse of high aspect ratio features. 1, 2 To understand the kinetics and overall mechanism of photoresist dissolution into the high pressure CCS/scCO 2 solution, we use a quartz crystal microbalance (QCM). QCM measures the frequency changes of the quartz crystal when mass loadings, temperature, pressure, and solution viscosity change. In the last decade, QCM has been used to monitor dissolution of photoresist materials in liquid solutions in real time. 3 The technique has been adapted to high pressure systems, with corrections for pressure and solution viscosity effects. 4 In this paper, QCM was used in high pressure scCO 2 conditions to monitor the dissolution kinetics of the photoresist using the CCS/scCO 2 solution. The frequency changes of the quartz crystal were recorded and corrected for both pressure and solution viscosity to estimate the mass removed as a function of time. The initial photoresist dissolution rates in the CCS/scCO 2 solution at temperatures between 35 o C and 50 o C and pressures ranging from 3500 psi to 5000 psi are reported. The plots of photoresist removal with time are linear signifying a zero order overall removal rate. The activation energy for photoresist removal at a CO 2 density of 0.896 g/ml is 76 mJ/mol.

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Section: Introductionmentioning

confidence: 99%

Monitoring photoresist dissolution in supercritical carbon dioxide using a quartz crystal microbalance

Zweber

Carbonell

2006

SPIE Proceedings

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“…Instead, strategically structuring BARCs has been reported as the preferred approach to ameliorate the detrimental side effects of high-NA imaging and reflective notching when practicing high resolution lithography [3][4][5][6][7]. Such strategy includes the use of discrete or continuous bottom antireflective multilayers with optical properties defined throughout the antireflective element(s) in such a way that the optical constants at the top of the BARC surface are approximately or identically equal to those of the photoresist at the exposure wavelength, to minimize reflection at the photoresist-BARC interface.…”

Section: Shozo Shiraimentioning

confidence: 99%

The Photopolymer Science and Technology Award

Goldfarb¹,

Vylicky²,

Burns³

et al. 2009

J. Photopol. Sci. Technol.

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ArF excimer laser resists based on fluoroalcohol

Itô

Truong

Allen

et al. 2006

Polymers for Advanced Techs

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This paper reviews IBM's 193 nm resist development efforts, placing an emphasis on the systems employing fluoroalcohol as an acidic group. Polymethacrylates were initially selected as a platform for their good transparency at 193 nm and then the emphasis on dry etch resistance prompted the work on all‐norbornene systems. Carboxylic acid was employed in these resist systems as an acid group, which resulted in significant swelling during aqueous base development. Replacement of the carboxylic acid with fluoroalcohol has produced second generation 193 nm resist systems, the good dissolution behavior of which is offered by the fluoroalcohol group. The fluoroalcohol‐based 193 nm resists in this study include cycloolefin‐SO2, all‐norbornene, trifluoromethylacrylate‐norbornene (and vinyl ether), methacrylate, and silsesquioxane systems. Copyright © 2006 John Wiley & Sons, Ltd.

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Characterization and Lithographic Performance of Silsesquioxane 193 nm Bilayer Resists

Cited by 5 publications

References 31 publications

Monitoring photoresist dissolution in supercritical carbon dioxide using a quartz crystal microbalance

Monitoring photoresist dissolution in supercritical carbon dioxide using a quartz crystal microbalance

The Photopolymer Science and Technology Award

ArF excimer laser resists based on fluoroalcohol

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