Characterization and mechanism of crystallization of Ge films on silicon substrate with graphite buffer layer

The effect of Ge content on structural evolution of Ge-rich GeSbTe alloys at increasing temperature

“…Fig. 7 also highlights the crystallization temperature of a-Ge reduced below 350 °C, whereas it is generally reported to be in the range of 480 °C -530 °C [30][31][32][33]. Indeed, the heterogeneous nucleation of Ge can be likely observed in our samples, which is induced at the interfaces of the already existing GST crystalline seeds [34][35][36].…”

Thermal Annealing Effect on Surface-Enhanced Raman Scattering of Gold Films Deposited on Liquid Substrates

“…It can be used to eliminate residual internal stress and lattice defects, reduce film surface energy, bond between film layers, etc., and thus has an important impact on the physical and chemical characteristics (such as microscopic morphology, crystallinity, mechanical properties, electrical properties and optical properties, etc.) of the deposited films [ 26 , 27 , 28 , 29 , 30 , 31 , 32 ]. Zhou et al annealed the Au film based on electron beam deposition at 100 °C to 400 °C and analyzed the evolution of residual stress in the Au film after annealing; they found that the voids in the Au film were eliminated, the stability of the film increased and the stress level was also raised [ 33 ].…”

Zn(002)-preferred and pH-buffering triethanolamine as electrolyte additive for dendrite-free Zn anodes

“…This alignment maximizes the coverage of TEOA on the surface and slows down the growth of Zn(002), resulting in preferential exposure of Zn(002). 26 In addition, the adsorption of TEOA on Zn(002) is stronger than that of H 2 O (Fig. S3, ESI †), which can inhibit direct contact between H 2 O and the Zn anode and suppress the related side reactions.…”