Characterization and modeling of Cu(In, Ga)(S, Se)<sub>2</sub>‐based photovoltaic devices: A laboratory and industrial perspective

Tuttle, J. R.; Sites, James R.; Delahoy, A. E.; Shafarman, William N.; Baso, B.; Fonash, Stephen J.; Gray, J.L.; Menner, R.; Phillips, J. E.; Rockett, Angus; Scofield, John; Shapiro, Finley R.; Singh, Pritpal; Suntharalingam, V.; Tarrant, D.; Walter, T.; Wiedeman, S.; Peterson, T.M.

doi:10.1002/pip.4670030202

Cited by 12 publications

(10 citation statements)

References 19 publications

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“…In order to calculate the potential distribution and electron and hole concentrations in the solar cell layers, Poisson's equation (1) and the steady state continuity equations for electrons (2) and holes (3) are solved simultaneously: rð r 0 rCðx; yÞÞ ¼ qðpðx; yÞ À nðx; yÞ þ N D ðx; yÞ À N A ðx; yÞÞ (1) rJ n ðx; yÞ ¼ ÀqðGðx; yÞ À Rðx; yÞÞ (2) rJ p ðx; yÞ ¼ þqðGðx; yÞ À Rðx; yÞÞ (3) C is the electrostatic potential, while p and n are the hole and electron densities. N D and N A are the ionized donor and acceptor densities.…”

Section: Theorymentioning

confidence: 99%

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2D device modelling and finite element simulations for thin-film solar cells

Malm¹,

Edoff²

2009

Solar Energy Materials and Solar Cells

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Section: Theorymentioning

confidence: 99%

“…In order to develop the technology further, numerical modelling and simulation of devices can be used. It has previously been used as a valuable tool to increase the understanding of device operation, but its importance will most likely increase as optimization is required to push the performance per price ratio in production [1,2].…”

Section: Introductionmentioning

confidence: 99%

2D device modelling and finite element simulations for thin-film solar cells

Malm¹,

Edoff²

2009

Solar Energy Materials and Solar Cells

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“…However, there has also been evidence that the blocking behavior can be light-dependent [4] and may specifically depend on the deposition of the CdS or ZnO layers [6]. In this case, the behavior may originate at one of the interfaces between the ZnO, CdS, and CulnSe,.…”

Section: Nt R 0 Duct Io Nimentioning

confidence: 99%

“…Because of these properties, the blocking behavior has been attributed to the Mo/CulnSe, back contact. Measurements of the Mo contact to single crystal CulnSe, showed that the contact behavior depended on the defect state concentration of the CulnSe, [5].However, there has also been evidence that the blocking behavior can be light-dependent [4] and may specifically depend on the deposition of the CdS or ZnO layers [6]. In this case, the behavior may originate at one of the interfaces between the ZnO, CdS, and CulnSe,.…”

mentioning

confidence: 98%

Direct current-voltage measurements of the Mo/CuInSe/sub 2/ contact on operating solar cells

Shafarman¹,

Phillips²

1996

Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996

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Many high efficiency CulnSe, based solar cells show blocking or non-ohmic contact behavior in their currentvoltage characteristic which has often been attributed to the Mo/CulnSe, back contact.A novel device configuration is presented which allows the currentvoltage characteristic of the Mo/CulnSe, junction to be analyzed separately from the rest of the operating solar cell. Direct measurements of the back contact on operating CulnSe, based solar cells which demonstrate this blocking behavior show that the Mo/CulnSe, contact is ohmic with negligible contact resistance compared to the total series resistance of the device. I NT R 0 DUCT IO NIMany high efficiency CulnSe, based solar cells have shown blocking or non-ohmic contact behavior in their current-voltage (J-V) characteristic [1][2][3][4]. This "roll-over" of the J-V curve in forward voltage bias is seen at normal operating temperatures in some devices, but is more common and more pronounced at reduced temperatures. The shape of this roll-over behavior in the J-V curve and the temperature at which it appears depend on the processing and electronic properties of the CulnSe,. In many cases this affects the J-V curve in the power quadrant, reducing the fill factor. However, it has been shown that the parasitic J-V behavior does not have any effect on the open circuit voltage of the device [4] and is therefore assumed to occur in series with the primary diode. Because of these properties, the blocking behavior has been attributed to the Mo/CulnSe, back contact. Measurements of the Mo contact to single crystal CulnSe, showed that the contact behavior depended on the defect state concentration of the CulnSe, [5].However, there has also been evidence that the blocking behavior can be light-dependent [4] and may specifically depend on the deposition of the CdS or ZnO layers [6]. In this case, the behavior may originate at one of the interfaces between the ZnO, CdS, and CulnSe,. Numerical modeling has shown that the qualitative features of the blocking behavior could be simulated by a non-ohmic Mo/CulnSe, contact or changes in the electrical properties of the CulnSeJCdS junction [7].In this paper, a novel device configuration is presented which has allowed the Mo/CulnSe, junction to be analyzed separately from the rest of the operating solar cell. Direct measurements of the contact have been completed on a device which shows a non-ohmic blocking contact in its J-V behavior. The results show that the nonohmic behavior does not occur at the Mo/CulnSe, contact. 917 0-7803-3166-4/96/$5 .OO 0 1996 IEEE! EXPERIMENT The CulnSe, in this work was formed by the selenization of Cu/ln precursor layers in a H, S e atmosphere [8]. The MO was deposited by sputtering, the CdS by chemical bath deposition, and the ZnO by rf sputtering. Details are giver1 in [9]. The direct measure of the back contact J-V behavior requires that the CulnSe, is deposited across a gap in the MO back contact. A schematic of the configuration is shown in Fig. 1. The MO has been prepared either by laser scri...

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“…Measurements of the Mo contact to single crystal CuInSe, showed that the contact behavior depended on the defect state concentration of the CuInSe, [234]. However, there has also been evidence that the blocking behavior can be light-dependent [221] and may specifically depend on the deposition of the CdS or ZnO layers [235]. In this case, the behavior may originate at one of the interfaces between the ZnO, CdS, and CuInSe,.…”

Section: Introductionmentioning

confidence: 99%

Processing and modeling issues for thin-film solar cell devices. Final report

Birkmire¹,

Phillips

1997

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This publication was reproduced from the best available camera-ready copy submiited t.y the subconuactor and received no editoriai review at NREL NOTICE This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States goverment nor any agency thereof, nor any of their employees. makes any warranty, express or implied, or assumes any legal liabiiii or responsibility for the accurxy, completeness. or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily consiiute or imply its endorsement, recommendation, or tavoring by the United States government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States government or any agency thereo". Available to DOE and DOE contractors from:Cffice of Scientific and Technical Information (OSTI) P SUMMARYDuring the third phase of the subcontract, IEC researchers have continued to provide the thin film PV community with greater depth of understanding and insight into a wide variety of issues including: the deposition and characterization of CuInl-,GaxSe2, a-Si, CdTe, CdS, and TCO thin films; the relationships between film and device properties; and the processing and analysis of thin film PV devices. This has been achieved through the systematic investigation of all aspects of film and device production and through the analysis and quantification of the reaction chemistries involved in thin fdm deposition. This methodology has led to controlled fabrications of 15% efficient CuInl,GaxSe2 solar cells over a wide range of Ga compositions, improved process control of the fabrication of 10% efficient a-Si solar cells, and reliable and generally applicable procedures for both contacting and doping CdTe films. Additional accomplishments are listed below. Cu(InGa)Se, Multisource EvaporationCu(InGa)Se, films have been deposited by elemental evaporation with Ga composition ranging from 0.25 < x < 0.80. The films are deposited with the Ga uniformly distributed from the Mo back contact to the front surface. This allows the effects of increasing Ga to be characterized without differences in the device operation due to gradients in the electrical and optical properties of the Cu(InGa)Se,.The solar cells fabricated from these uniform films have 15% efficiency for x < 0.5 or Eg < 1.3 eV. V, increases over the entire range of Ga content, up to 820 mV, but the device efficiency declines with high Ga content due primarily to a drop in fill factor and short circuit current. Analysis of current-voltage and quantum efficiency results show that the main cause of this drop off is a voltage dependent current collection. Finally, preliminary results show that the fill factor can be improved by grading the bandgap of the Cu(InGa)Se,,...

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Characterization and modeling of Cu(In, Ga)(S, Se)₂‐based photovoltaic devices: A laboratory and industrial perspective

Cited by 12 publications

References 19 publications

2D device modelling and finite element simulations for thin-film solar cells

2D device modelling and finite element simulations for thin-film solar cells

Direct current-voltage measurements of the Mo/CuInSe/sub 2/ contact on operating solar cells

Processing and modeling issues for thin-film solar cell devices. Final report

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Characterization and modeling of Cu(In, Ga)(S, Se)2‐based photovoltaic devices: A laboratory and industrial perspective

Cited by 12 publications

References 19 publications

2D device modelling and finite element simulations for thin-film solar cells

2D device modelling and finite element simulations for thin-film solar cells

Direct current-voltage measurements of the Mo/CuInSe/sub 2/ contact on operating solar cells

Processing and modeling issues for thin-film solar cell devices. Final report

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Product

Resources

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Characterization and modeling of Cu(In, Ga)(S, Se)₂‐based photovoltaic devices: A laboratory and industrial perspective