Characterization and Modeling of High-Voltage LDMOS Transistors

Reggiani, Susanna; Barone, G.; Gnani, Elena; Gnudi, A.; Baccarani, G.; Poli, S.; Wise, R.; Chuang, Ming-Yeh; Tian, Wei; Pendharkar, S.; Denison, M.

doi:10.1007/978-3-319-08994-2_11

Cited by 5 publications

(3 citation statements)

References 66 publications

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“…By applying Eqs. (3)(4) separately to the gate-to-source (forward current if) and gate-to-drain (reverse current ir) sides, the drain current (5) is calculated as the difference between forward if and reverse current ir, multiplied by the current normalization factor (2NIDEut 2 CoxW/L) and carrier mobility (). Such normalization relation helps in decoupling transistor sizes or technology dependence, as the normalized drain current is only a function of the device bias voltages (V G , V D , V S ), electrostatic control (NIDE) and temperature.…”

Section: A the I-v Model And Its Implementationmentioning

confidence: 99%

“…S transistor's dimensions shrink without a corresponding reduction of the supply voltage, hot carrier degradation is becoming one of the main reliability concerns for state-of-theart nMOSFETs [1,2]. Both TCAD- [3,4] and compact-modelbased strategies [5,6,7] have been demonstrated for modelling the hot carrier induced device degradation. However, among all these efforts, no detailed investigation of the crucial correlation between the generated interface states and mobility degradation has been reported.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET

Franco

Truijen

et al. 2021

IEEE Trans. Electron Devices

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Investigation of the impact of hot-carrier-induced interface state generation on carrier mobility in nMOSFET Abstract-A comprehensive investigation on the hot carrier induced interface state generation and its impact on carrier mobility in nMOSFET is performed. I-V compact modelling and charge pumping characterization are used as independent ways to evaluate the interface state density as a function of hot carrier induced aging. From the two techniques, similar power-law time exponents of the interface state density kinetics are obtained. Assisted by the quasi-spectroscopic (temperature-resolved) charge pumping measurement, the extracted interface state density is further correlated with the I-V modelling results: an universal mobility degradation normalization parameter Nit,ref =~4.1x10 11 /cm 2 is reported, irrespective of the effective-oxide-thickness (EOT), stress temperature, or the relative degradation of the device-under-test (DUT). Supported by the fundamental principles deployed in the derivation as well as the broad range of experimental conditions considered for its validation, the reported normalization parameter could serve as a modelling constant in the commonly used I-V compact models to correlate the mobility degradation with the interface state density induced by hot carrier stress.

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Section: A the I-v Model And Its Implementationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET

Franco

Truijen

et al. 2021

IEEE Trans. Electron Devices

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“…The chapters of Huard [6], Scholten [13], and Schlünder [14] discuss bridging the gap between device and circuit models. Hot carrier damage in various device types (LDMOS, FinFET, SiGe BJTs, and SiGe channel PFETs) is discussed in the chapters of Reggiani [15], Alagi [16], Cho [17], Chakraborty [18], and Franco [19]. The remainder of this chapter will discuss the atomic picture of HCD and bridging the gap from that picture to realistic circuit prediction.…”

Section: Introductionmentioning

confidence: 99%