Characterization and Modeling of Metal/Double-Insulator/Metal Diodes for Millimeter Wave Wireless Receiver Applications

Rockwell, S.; Lim, Dong-Gun; Bosco, B.; Baker, J.; Eliasson, Bertil; Forsyth, K.; Cromar, M. W.

doi:10.1109/rfic.2007.380858

Cited by 23 publications

(8 citation statements)

References 1 publication

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“…[1][2][3][4][5] Thin-film technology based diodes such as metal-insulatormetal (MIM) diodes or 2-dimensional (2D) material based metal-insulator-graphene (MIG) diodes are attracting increasing research interests over the past years, due to their high performance and thin-film fabrication process on rigid or flexible substrate. [6][7][8][9][10][11][12][13][14][15][16] Moreover, MIG diodes are also used as building blocks to realize different circuits, such as mixers, power detectors, RF receivers etc. [17][18][19][20][21] In MIM or MIG diodes, the junction is defined by an insulating barrier layer either between two metal layers with different work functions (in the case of MIM diodes) or between one metal layer and one graphene layer (in the case of MIG diodes).…”

Section: Introductionmentioning

confidence: 99%

Flexible One-Dimensional Metal–Insulator–Graphene Diode

Wang

Uzlu

Shaygan

et al. 2019

ACS Appl. Electron. Mater.

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In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al 2 O 3 -encapsulated graphene with TiO 2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.

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Section: Introductionmentioning

confidence: 99%

Flexible One-Dimensional Metal–Insulator–Graphene Diode

Wang

Uzlu

Shaygan

et al. 2019

ACS Appl. Electron. Mater.

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“…The next step of the nonlinear device characterization is the evaluation of the non-linearity. This could be calculated by taking the derivative of the differential resistance [4] but RF measurements are closer to the MPH application. As previously mentioned, the efficiency of a rectifier circuit is in part limited by the DC power transfer efficiency.…”

Section: Non-linearity Characterizationmentioning

confidence: 99%

Spintronics-based devices for Microwave Power Harvesting

Hemour

Houssameddine

Whig

et al. 2012

2012 IEEE/MTT-S International Microwave Symposium Digest

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Since nearly the beginning, the Schottky diode rules in the development of RF/microwave mixing and rectifying circuits. However, in the specific µW power harvesting applications, the diodes fail to provide satisfying RF-to-DC conversion efficiency mainly due to their high zero-bias junction resistance. This work introduces for the first time a nonlinear component for power rectification based on a recent discovery in spintronics: the spindiode. Along with an analysis of the role of the nonlinearity and the zero bias resistance in the rectification process, it will be shown how the spindiode can provide 10 times more power than a Schottky diode.

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“…As a result, the receiver consists of a nonlinear amplifier (NLA), a five-stage LA, an off-set canceller and an output buffer. To detect the millimeter-wave pulses, a metal-insulator-insulator-metal (MIIM) diode (Rockwell, 2007) or a Schottky diode (Sankaran, 2005) was conventionally used. However, the MIIM diode is used in special CMOS process, thus increasing the cost of the pulse receiver.…”

Section: 2mw 2gbps Cmos Pulse Receiver Designmentioning

confidence: 99%