Characterization and modeling of resistive-transition phenomena and electronic structure of sputter-deposition SiO<inf>2</inf> films

Possible Models of Electron-Energy Transfer in Resistance Switching by Sputter-Deposited Silicon Oxide Films: Potential of Extremely Low-Energy Switching

“…30 that initial forming fails if a negative voltage is applied to the top electrode, which leads to the conclusion that 'hot electron injection' from the bottom electrode guarantees repeatable switching, not 'cold electron injection' from the top electrode. The post-low-resistance-transition states of the silicon oxide film were also investigated in terms of direct current 18,30,31 in order to analyze the transport property of conductive paths. In this study, the impact of current compliance condition (Ic) on the resistance transition to the high-resistance state is investigated in detail in order to elucidate the key mechanism of the resistance transition of sputterdeposited silicon oxide films.…”

“…[6][7][8] Elucidating them will yield various device applications including ReRAM devices 9 and contribute to more reliable insulating films. [10][11][12][13] Many articles have discussed the resistance switching of silicon oxide films [14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] because the material is very cheap and success in this field will greatly impact the electronic industry. The authors investigated mechanisms for realizing stable resistance switching of silicon oxide films using the structure of Au/SiO 2 /β-FeSi 2 /n-Si substrate; 30 the contribution of hot-electron injection was strongly suggested.…”

Possible Equivalent Circuit Model and Physical Structures of Sputter-Deposited Silicon Oxide Film Showing Resistive Switching

“…The author's previous paper demonstrated that hot-electron injection from the Si substrate had the potential to trigger the resistance switching of sputter-deposited Si oxide films; 26 it also mentioned that Si precipitates played an important role in realizing repeatable bipolar switching. 14,27,28 However, it did not definitively elucidate why unipolar switching was not readily observed in sputter-deposited silicon oxide films in our past studies, even though it is not a transition-metal oxide. 28,29 It is expected that resistance switching in silicon oxide films may be governed by several as yet unknown phenomena.…”

“…4,5 However, attention should be placed on the physics and chemistry of resistance switching in non-transition-metal oxide films 6,7 because industry still needs their low cost and chemical stability to develop advanced applications. 8,9 Many people have investigated the resistance switching of sputterdeposited silicon oxide films in detail [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] because this material dispenses with the rear metal and the transition metal. Many papers addressed the role of silicon sub-oxide (SiOx) [10][11][12]15,16,18,19 because it is anticipated that the unstable bonds of non-stoichiometric silicon oxide can create degraded, but reversible, conductive paths inside the film.…”

“…This paper starts by introducing experiments on the impedance analysis of a device exhibiting resistive switching. 14 Based on the aspects discovered, this paper proposes a possible equivalent circuit model to characterize the switching behavior at room temperature, where it is revealed that frequency dispersion of conductance component and capacitance component must be considered in interpreting the equivalent circuit. Validity of this model is examined using other experimental data, 26,28 and possible mechanisms of resistive switching of sputter-deposited silicon oxide films are discussed based on physics and chemistry.…”