Characterization and Modeling of Three-Terminal Heterojunction Phototransistors Using an InGaP Layer for Passivation

Tan, Shin Hwei; Chen, Hon−Rung; Chen, Wei-Tien; Hsu, Meng−Kai; Lin, A.H.; Lour, Wen‐Shiung

doi:10.1109/ted.2004.842537

Cited by 31 publications

(23 citation statements)

References 14 publications

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“…The enhanced current gain was obtained by RTPannealing and details discussed in Figure 5. Besides, Gummel plot is the most typical measurement that is employed to characterize the performance of the HBTs [5][6][7][8][9][10][13][14][15][16]. Figure 3 shows the Gummel plots for A-HBT.…”

Section: Hbt Performances and Discussionmentioning

confidence: 99%

Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment

Tan

Lai²

2012

Advances in Materials Science and Engineering

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A thermal treatment was employed to improve the DC performances of npn graded-base AlGaN/GaN heterojunction bipolar transistors (HBTs). Such HBTs without the thermal treatment exhibit a higher turn-on voltage of 6.45 V, a lower current gain of 0.84, and a lower collector current of 3.18 × 10 −4 mA at V BE of 4.5 V. The HBTs are examined by thermal treatment with rapid thermal process (RTP) annealing at various times and various temperatures. Experimental results reveal that the HBTs with the thermal treatment exhibit a lowest turn-on voltage of 3.90 V, a highest current gain of 9.55, and highest collector current of 112.2 mA at V BE of 4.5 V. The thermal treatment brings forth the most remarkable improvements for the HBTs when the base parasitical Schottky diodes are modified.

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Section: Hbt Performances and Discussionmentioning

confidence: 99%

Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment

Tan

Lai²

2012

Advances in Materials Science and Engineering

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“…This current component is represented by the ideality factor 1 for the forward operation. The device parameters extracted as in literature 11,12 are also included. According to Sec.…”

Section: Experimental and Modeling Performancesmentioning

confidence: 99%

EXPERIMENTAL CHARACTERIZATION AND MODELING ANALYSIS ON NPN AlGaN/GaN HBT WITH HIGH IDEALITY FACTOR IN BOTH COLLECTOR AND BASE CURRENT

Tan

Lai

2012

Surf. Rev. Lett.

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Characterization and modeling analysis on both ideality factor of the collector current ( C ) and the base current ( B ) have higher than the excepted values of 1.0 and 2.0, respectively, for npn AlGaN/ GaN heterojunction bipolar transistors (HBTs) have been reported. We employ the rapid thermal process annealing (RTP-annealing) to modify the base parasitical Schottky diode (called A-HBTs) after the as-deposited Ni/Au bilayers on the base layer for electrode with no annealing (called N-HBTs) to compare with each other. For a HBT operated in Gummel-plot con¯guration, experimental and modeling results indicate that the base parasitical Schottky diode (BPSD) causes the base current (I B ) and collector current (I C ) with high ideality factor and raise the base-emitter voltage (V BE ) to higher operation point, and therefore lead to more power consumption. Furthermore, the extended EbersÀMoll equivalent-circuit model together with the extracted device parameters provided simulated results that were in a good agreement with experimental ones.

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“…A large number of research works have been reported so far describing the growth, fabrication and performance of two-and three-terminal HPT structures using different material systems [1][2][3][4][5][6][7][8][9]. Initially, for telecommunication wavelengths, the preferred material reported was InGaAs alloy grown on InP platform [10].…”

Section: Introductionmentioning

confidence: 99%

“…Initially, for telecommunication wavelengths, the preferred material reported was InGaAs alloy grown on InP platform [10]. To cover different wavelengths, HPTs based on other III-V compounds and their alloys have also been considered in both theoretical and experimental analyses [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Characteristics of GeSn‐based multiple quantum well heterojunction phototransistors: a simulation‐based analysis

Pandey

Basu

2018

IET Optoelectronics

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Characterization and Modeling of Three-Terminal Heterojunction Phototransistors Using an InGaP Layer for Passivation

Cited by 31 publications

References 14 publications

Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment

Reduced Turn-On Voltage for npn Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment

EXPERIMENTAL CHARACTERIZATION AND MODELING ANALYSIS ON NPN AlGaN/GaN HBT WITH HIGH IDEALITY FACTOR IN BOTH COLLECTOR AND BASE CURRENT

Characteristics of GeSn‐based multiple quantum well heterojunction phototransistors: a simulation‐based analysis

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