Characterization and optimization of MIS-HEMTs device of high~k dielectric material on quaternary barrier of Al0.42ln0.03Ga0.55N/UID-AIN/GaN/GaN heterostructure for high power switching application

Study of Low Noise with High Linearity AlGaN/GaN HEMTs by Optimizing Γ-Gate Structure for Ka-Band Applications

“…GaN-based high electron mobility transistors (HEMTs) have gained great attention in high-frequency and high-power applications due to their excellent material properties, such as high electron mobility, saturation velocity, and large breakdown electric field. [1][2][3][4][5] Nowadays, numerous reports have been proposed to discuss improving the device characteristics of HEMTs by heterostructure growth optimization, [6][7][8] ohmic contact optimization, [9][10][11] and surface passivation effects. [12][13][14] With the rapid development of the fifth-generation (5 G) wireless network, information transmission can be carried out in a wider bandwidth with faster speed and greater capacity, which also drives the upgrade of wireless communication module technology.…”