2007
DOI: 10.1063/1.2679233
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Characterization and optoelectronic properties of p-type N-doped CuAlO2 films

Abstract: This letter reports a technique for increasing the carrier concentration and the conductivity of the p-type CuAlO2 through doping the material with nitrogen. The x-ray photoelectron spectroscopy and the optical band gap analyses suggested that the nitrogen atoms occupying the interstitial sites of the delafossite structure provided the p-type CuAlO2 with an impurity energy level in the energy gap. It was also found that the N-doped CuAlO2 film had its optimum conduction properties when the dopant level reached… Show more

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Cited by 48 publications
(32 citation statements)
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“…It is obvious that the film using 15 % N 2 O flow ratio reaches the optimum crystallinity. Due to the similar atomic radii of N and O, the delafossite structure is hardly affected when N is doped into the CuAlO 2 lattice [10]. This has been confirmed by XRD patterns in which all the peaks corresponding to classical delafossite structure are stable and hardly changed after N-doping.…”
Section: Resultssupporting
confidence: 70%
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“…It is obvious that the film using 15 % N 2 O flow ratio reaches the optimum crystallinity. Due to the similar atomic radii of N and O, the delafossite structure is hardly affected when N is doped into the CuAlO 2 lattice [10]. This has been confirmed by XRD patterns in which all the peaks corresponding to classical delafossite structure are stable and hardly changed after N-doping.…”
Section: Resultssupporting
confidence: 70%
“…In our work, the accepter impurity N is believed to be another main factor for the conductivity of N-doped CuAlO 2 films. The nonstoichiometric defects for N-doped CuAlO 2 films can be represented by the following equations [10,23]: (3) shows the electrical mechanism for acceptor N in the oxygen site. Compared with the equation (2), when a N atom enters into CuAlO 2 lattice, an extra hole carrier will be created, which is considered as the main reason for the increasing conductivity with the increase of N 2 O flow ratio.…”
Section: Resultsmentioning
confidence: 99%
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“…[1] In the delafossite compounds, the structure CuMO 2 (M=Al, Ga, and In) can be visualized as consisting of two alternate layers: a planar layer of Cu cation in a triangular pattern and a layer of edge-sharing MO 6 octahedra flattened with respect to the c-axis. [1,2] Although most delafossite films have been prepared by vacuum based technologies, [3][4][5] there are only a few reports on the sol-gel synthesis of p-type delafossite films in recent years. [6,7] This is because the instability of Cu + and the sensibility of the oxygen partial pressure.…”
Section: Introductionmentioning
confidence: 99%
“…For a long time, there has been no agreement either on the origin of the p-type conductivity or on the electronic band gap of the pure crystal. Measurements of the direct optical band gap (E dir g ) of CuAlO 2 fall in the range from 2.9 eV to 3.9 eV [19,20,136,[139][140][141][142][143][144][145][146][147][148][149], with most values in the interval 3.4-3.7 eV. These experiments also yield a large dispersion of indirect gaps (E ind g ), from 1.65 eV to 2.1 eV, with one experiment measuring 2.99 eV [146].…”
Section: Delafossite Transparent Conductive Oxidesmentioning
confidence: 92%