Characterization and Performance Evaluation of the Superjunction RB-IGBT in Matrix Converter

Zhou, Kun; Huang, Linhua; Luo, Xiaorong; Li, Zhaoji; Li, Juntao; Dai, Gang; Zhang, Bo

doi:10.1109/tpel.2017.2709323

Cited by 29 publications

(6 citation statements)

References 48 publications

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“…The backside ion implantation method is used nowadays; this can be employed to obtain variable doping in the collector region. Both techniques are quite mature and will not overly affect the cost [14][15][16]. The process steps start with a heavily doped n-type substrate.…”

Section: Process Stepsmentioning

confidence: 99%

A low-loss variable-doped trench-insulated gate bipolar transistor with reduced on-state voltage

Vaidya¹,

Naugarhiya²,

Verma³

et al. 2021

Semicond. Sci. Technol.

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The performance of a superjunction trench-insulated gate bipolar transistor with variable vertical doping in the epitaxial region along with variation in the collector layer is investigated. The concept of vertical variation transfers the avalanche multiplication point from the epitaxial edges to the middle of the pillar. The proposed device offers increased effective doping in the drift region, which reduces the on-state voltage (V on ) without any degradation in the breakdown voltage. Furthermore, the horizontal doping variation in the collector layer supports the phenomenon in two ways: the left section of the collector layer reduces V on whereas the right portion enables an efficient discharging path, which allows improved switching performance. In addition to this, a reduction in the gate to collector charge (Q GC ) is observed because of the presence of a lightly doped n-region below the gate terminal. A two-dimensional numerical simulation revealed that the proposed device offers a 15.30% reduction in Q GC compared with the conventional device. The structural modification offers a 40% reduction in turn-off time, resulting in a reduction in turn-off energy loss (E off ).

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Section: Process Stepsmentioning

confidence: 99%

A low-loss variable-doped trench-insulated gate bipolar transistor with reduced on-state voltage

Vaidya¹,

Naugarhiya²,

Verma³

et al. 2021

Semicond. Sci. Technol.

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“…The disadvantage of the matrix converter is voltage gain, the maximum value of which is equal q max = √ 3 Safe commutation of individual transistors of the matrix converter is connected with the fulfillment of the following rules: i) should not cause a short circuit between the two input phases, because the consequent high circulating current might destroy the switches, ii) should not cause an interruption of the output current, because the consequent overvoltage might likely destroy the switches [9]. In order to meet these rules, several commutation strategies have been proposed [51], [52]. The most common solution is the fourstep commutation strategy.…”

Section: Matrix Converter Topology and Space Vector Modulation Almentioning

confidence: 99%

Petri Net-Based Specification of Cyber-Physical Systems Oriented to Control Direct Matrix Converters With Space Vector Modulation

et al. 2019

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This paper proposes a Petri-net-based specification of cyber-physical systems dedicated to the control of a direct matrix converter with space vector modulation (SVM) and transistor commutation. The technique employed is further applied for hardware implementation in a programmable logic device [namely, field-programmable gate array (FPGA)]. Contrary to the traditional SVM computation methods, concurrency aspects of the digital devices are highly utilized in the presented solution. Therefore, the hardware system is specified by a live and safe Petri net, which is based on the parallelism. Moreover, such a specification can be easily analyzed and verified against the structural properties in order to avoid formal errors and prototyping mistakes (such as deadlocks or non-reachable states). The proposed idea is illustrated by a case-study example of the real prototype of the SVM algorithm. The system has been specified by a live and safe Petri net, analyzed, verified, and finally implemented in the FPGA device. The obtained results of the physical implementation are presented and discussed.

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“…In order to address these concerns, a novel Partial Schottky Collector Superjunction Reverse Conduction IGBT (PSC-SJ-RC-IGBT) is proposed and studied, and the new structure eliminates the snapback phenomenon and achieves ultra-low power loss and reverse recovery charge by utilizing the unipolar conduction of the Schottky diode and its rapid turn-off characteristics. Other researchers have also proposed new back-side engineering methods to improve the performance of IGBTs, with DCT RC-IGBT eliminating the snapback phenomena with two collector trenches [ 32 ]; in addition, trench-isolated SJ-IGBTs improve the SJ-IGBTs with back-side trenches [ 33 ] and RB-SJ-IGBTs improve the performance of the bidirectional IGBT [ 34 ]. Compared with these structures, the PSC-SJ-RC-IGBTs have three different innovation points: 1.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Operation Mechanism of Superjunction in RC-IGBT and a Novel Snapback-Free Partial Schottky Collector Superjunction RC-IGBT

Yuan,

Li,

Hou

et al. 2023

Micromachines

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This paper explores the operation mechanism of the superjunction structure in RC-IGBTs based on carrier distribution and analyzes the advantages and challenges associated with its application in RC-IGBTs for the first time. A Partial Schottky Collector Superjunction Reverse Conduction IGBT (PSC-SJ-RC-IGBT) is proposed to address these issues. The new structure eliminates the snapback phenomenon. Furthermore, by leveraging the unipolar conduction of the Schottky diode and its fast turn-off characteristics, the proposed device significantly reduces the turn-off power consumption and reverse recovery charge. With medium pillar doping concentration, the turn-off loss of the PSC-SJ-RC-IGBT decreases by 54.1% compared to conventional superjunction RC-IGBT, while the reverse recovery charge is reduced by 52.6%.

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Characterization and Performance Evaluation of the Superjunction RB-IGBT in Matrix Converter

Cited by 29 publications

References 48 publications

A low-loss variable-doped trench-insulated gate bipolar transistor with reduced on-state voltage

A low-loss variable-doped trench-insulated gate bipolar transistor with reduced on-state voltage

Petri Net-Based Specification of Cyber-Physical Systems Oriented to Control Direct Matrix Converters With Space Vector Modulation

Analysis of the Operation Mechanism of Superjunction in RC-IGBT and a Novel Snapback-Free Partial Schottky Collector Superjunction RC-IGBT

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