“…The Si2p peaks are found between 102 and 103 eV, a BE higher than that for Si 0C but lower than for Si 4C , corresponding to bonding typical of silicon suboxides SiO x , x < 2. In the literature, the difference in BE between O1s(Si-O) and O1s(Ti-O) ranges from 1.3 to 4.0 eV depending on the system: TiO 2 films on Si (1.3 eV) 25 , deposition of one monolayer Si on TiO 2 (1.6 eV) 26 , sol-gel TiO 2 films on glass (2.0 eV) 27 , sol-gel binary mixed titanium silicon oxides (2.5 and 3.0 eV) 28,29 , impregnation of SiO 2 with TiO 2 (2.5 eV) 30 , impregnation of TiO 2 with SiO 2 (3.0 eV) 31 and physically mixed TiO 2 and SiO 2 powders (4.0 eV) 28 . In a study of mixed titania and silica oxides prepared by coprecipitation, the separation between O1s(Si-O) and O1s(Ti-O) was found to depend on the Ti to Si molar ratio.…”