Characterization and properties of NiO films produced by rf magnetron sputtering with oxygen ion source assistance

Chen, S.C.; Wen, Chen-Yuan; Kuo, T.Y.; Peng, Wen-Chi; Lin, Hung-Yin

doi:10.1016/j.tsf.2014.07.062

Cited by 66 publications

(36 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…After connecting to the anode, the NiO (bleached state) is oxidized to NiO(OH) x (colored state) along with the insertion of OH − and extraction of e − . To date, NiO thin films can be fabricated by both physical methods like magnetron sputtering, pulsed laser deposition, electron beam evaporation and chemical methods like sol–gel processing, spray pyrolysis, and atomic layer deposition . High p‐type Hall mobility had been achieved by both RF sputtering (28.56 cm 2 V −1 s −1 ) and the spray‐pyrolysis method (11.96 cm 2 V −1 s −1 ), with typical carrier concentrations of 10 17 to 10 18 cm −3 .…”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

“…To date, NiO thin films can be fabricated by both physical methods like magnetron sputtering, pulsed laser deposition, electron beam evaporation and chemical methods like sol–gel processing, spray pyrolysis, and atomic layer deposition . High p‐type Hall mobility had been achieved by both RF sputtering (28.56 cm 2 V −1 s −1 ) and the spray‐pyrolysis method (11.96 cm 2 V −1 s −1 ), with typical carrier concentrations of 10 17 to 10 18 cm −3 . Similar to the previously discussed p‐type oxides, NiO has also been used in conventional electronic devices, such as TFTs and p–n diodes .…”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

See 1 more Smart Citation

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

View full text Add to dashboard Cite

The development of transparent p-type oxide semiconductors with good performance could be a true enabler for a variety of applications, where transparency, power efficiency and more circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, we review recent developments in materials and devices based on p-type oxide semiconductors, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides and nickel oxides. The crystal and electronic structures of these materials are reviewed, along with approaches to enhance valence band dispersion to reduce effective mass and increase mobility.Strategies to reduce the interfacial defects, off state current, and material instability are discussed. Furthermore, we show that promising progress has been made in the performance of various type of devices based on p-type oxides. For example, transparent oxide-based p-n junction diodes have experienced significantly improved performance, where rectification ratios >10 7 have been achieved. The performances of thin-film transistors and inverters have also been modestly improved. For example, thin-film transistors with field-effect mobilities exceeding 5 cm 2 V -1 s -1 have been reported. In addition, several innovative approaches were developed to fabricate transparent complementary metal oxide semiconductor (CMOS) 2 devices. These approaches include novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains (as high as 120 has been demonstrated).Some progress has also been made in reducing the interfacial defects and off state currents using capping layers, high quality dielectrics and surface treatments. Resistive memory devices and hole transport layer in optoelectronic devices, mostly based on nickel oxide, have made decent progress. Transparent ferroelectric memory devices comprising p-type oxides have also been reported recently showing good hole mobilities (~3.3 cm 2 V -1 s -1 ) and good retention characteristics. This even includes multistate memory devices that show good stability. Nanoscale (e.g. nanowire) devices have now been reported using p-type oxides and do show performance improvements at scaled device geometry. New process developments have been reported, and some p-type oxides can now be deposited using atomic layer deposition and chemical routes, with promising performances. However, despite these recent developments, p-type oxides still lag in performance behind the n-type counterparts, which have entered volume production in the display market. The recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented in this review.

show abstract

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

View full text Add to dashboard Cite

show abstract

“…However, transmittance of the films not only depend on the oxygen content present in the film, but grain size is also playing an important role. Excess oxygen gas atoms present in the film act as scattering centers for the incident light [26]. Hence a reduced transmittance was observed at higher oxygen flow rates.…”

Section: Optical Analysismentioning

confidence: 99%

Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering

Salunkhe

Kekuda

2020

Mater. Res. Express

178

View full text Add to dashboard Cite

We report a comprehensive study on influence of oxygen partial pressure on NiO thin films grown on glass substrates in a combined argon and oxygen ambience by reactive dc magnetron sputtering. In this present article, we have discussed the dependence of oxygen pressure on structural, chemical, morphological, optical and electrical properties of the sputtered NiO films. Glancing angle x-ray diffraction reveals that the deposited films were polycrystalline in nature with FCC phase. The preferred orientation changes from (200) to (111) in a higher O 2 flow rate environment and an average particle size was estimated using Scherrer relation. The surface morphology of films was studied by using atomic force microscopy. The x-ray photoelectron spectroscopy analysis demonstrates the core level Ni 2p spectra over a range of 850 eV to 885 eV of binding energy and observed Ni 2p 3/2 , Ni 2p 1/2 domains along with their satellite peaks. It infers the presence of both Ni +2 and Ni +3 oxidation states in the sputtered films. Additionally, Raman spectroscopy was carried out to confirm the structural defects level and crystalline nature of the films. The optical results show that deposited films were semi-transparent and the evaluated optical band gap of the material lies in the range 3.36 eV to 3.52 eV. The extracted electrical properties infer either n-type or p-type conductivity depending on the processing conditions of the films.

show abstract

“…NiO thin films have been prepared by various methods such as sputtering [18,19], sol gel [20], pulsed laser deposition [21,22], chemical vapor deposition [23,24], and spray pyrolysis [25,26]. Among these techniques, spray pyrolysis is the widely used; it is an attractive process to obtain thin films which requires low cost raw materials, adherent of deposits, very easy, safe and cheap.…”

Section: Introductionmentioning

confidence: 99%

Optical, Physical, Chemical and Electrical Properties of Nickel Oxide Sprayed Thin Films under Tin Doping Effects

Amor¹,

Hamzaoui²,

Boukhachem³

et al. 2015

Advances in Ceramic Science and Engineering

View full text Add to dashboard Cite

Tin-doped nickel oxide thin films have been successfully prepared by spray pyrolysis technique on glass substrates at 460°C. The effects of tin doping on structural, optical, and electrical properties were investigated. X-ray diffraction pattern reveals that all prepared thin films have cubic structure with (111) preferred orientation. The surface topography of these films was performed by atomic force microscopy. Optical measurements show a high transparency in the visible range around 95%. The optical band gap Eg decreases with Sn content from 3.633 to 3.54 eV. PL measurements show some bands transition which shift irregularly with Sn doping. Finally, the electric conductivity of NiO thin film was investigated through the impedance spectroscopy measurements in the frequency range 5 Hz-13 MHz at various temperatures. These measurements show a thermally activation of the electric. AC conductivity of NiO thin films is investigated through Jonscher law. Also, from these measurements, dielectric parameters were calculated.

show abstract

Characterization and properties of NiO films produced by rf magnetron sputtering with oxygen ion source assistance

Cited by 66 publications

References 16 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Investigation on tailoring physical properties of Nickel Oxide thin films grown by dc magnetron sputtering

Optical, Physical, Chemical and Electrical Properties of Nickel Oxide Sprayed Thin Films under Tin Doping Effects

Contact Info

Product

Resources

About