Characterization and Raman investigations on high-quality ZnO thin films fabricated by reactive electron beam evaporation technique

The effect of La doping concentration on the properties of zinc oxide films prepared by the sol–gel method

“…As shown in Fig. 7, the Raman peaks located at 433 cm À1 have been assigned to optical phonons E 2 (high) mode of wurtzite structure ZnO [33][34][35]. But the Raman frequency of E 2 (high) mode shifts towards the lower frequency side, which results from residual stress and lattice disorder [10] accompanied by the introduction of La.…”

The influence of substrate temperature on ZnO thin films prepared by PLD technique

“…Especially, as the UV emitting material, with the band gap of 3.6 eV and large exciton binding energy (60 meV) at room temperature, ZnO thin films have drawn much attention among the researchers [5][6][7][8][9][10].…”

Formation of Uniform Germanium Islands on Silicon Substrate Using Nickel as Catalyst by Thermal Evaporation Method

“…The absence of Si/Ge vibration peaks about 400 cm −1 corresponds to the Si/Ge alloy mode [17] implies there is no intermixing of Si from the substrate with GIs. The higher peak at 520 cm −1 is attributed to the optical phonon mode of the Si substrate [18]. The optical band gap (Eg) for GI lms were determined by analyzing the optical data, with the expression of the optical absorbance α and the incident photon energy hν, using the Tauc equation [19].…”