2014
DOI: 10.1039/c4fd00095a
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Characterization and simulation of electrolyte-gated organic field-effect transistors

Abstract: In this work we fabricate and characterize field-effect transistors based on the solution-processable semiconducting polymer poly(3-hexylthiophene) (P3HT). Applying two independent gate potentials to the electrolyte-gated organic field-effect transistor (EGOFET), by using a conventional SiO(2) layer as the back-gate dielectric and the electrolyte-gate as the top-gate, allows the measurement of the electrical double layer (EDL) capacitance at the semiconductor-electrolyte interface. We record the transfer curve… Show more

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Cited by 52 publications
(58 citation statements)
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References 29 publications
(52 reference statements)
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“…In single crystalline TMDs, such mid-gap states are absent. On the other hand, previous simulations on ion-gated organic transistors used a fixed capacitance induced by the ionic liquids 44,45 , which cannot include the variation of the capacitance due to the modification of the ion distribution by the source-drain bias voltage and the back action from the carriers in semiconductors. The general perspective of the ambipolar transport in MOSFETs has been discussed in ref.…”
Section: Introductionmentioning
confidence: 99%
“…In single crystalline TMDs, such mid-gap states are absent. On the other hand, previous simulations on ion-gated organic transistors used a fixed capacitance induced by the ionic liquids 44,45 , which cannot include the variation of the capacitance due to the modification of the ion distribution by the source-drain bias voltage and the back action from the carriers in semiconductors. The general perspective of the ambipolar transport in MOSFETs has been discussed in ref.…”
Section: Introductionmentioning
confidence: 99%
“…38 Please note that the transconductance depends on fixed values, as the channel geometry and VDS, and on the μCG product, which instead can be affected by binding events at the gate electrode.…”
Section: Resultsmentioning
confidence: 99%
“…In particular, the two electrical double layers (EDLs) established at both gate electrode/water and water/OSC interfaces are responsible for the electrical tuning of EGOFETs14. Since the aqueous media acts as the effective gate dielectric, a drastic lowering of the operational voltages is intrinsically guaranteed, because the usual EDL capacitance spans from few up to hundreds of μF/cm 2 compared to nF/cm 2 of standard dielectrics5. One direct consequence was the extensive exploitation of surface treatments on both gate electrode and OSC, which directly affects the overall performance.…”
mentioning
confidence: 99%