Characterization and simulation of organic adsorbates on the Si(100)(2 × 1)-surface using photoelectron spectroscopy and quantum mechanical calculations

Kugler, Thomas; Ziegler, Ch.; Göpel, Wolfgang

doi:10.1016/b978-0-444-82413-4.50087-1

Cited by 2 publications

(4 citation statements)

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“…In addition, aromaticity influences the reactivity of the amine functionality. A number of aromatic amines of various structures have been investigated on the Si(100) surface in UHV including aniline, − 1,4-phenylenediamine, pyrrole, , 3-pyrroline, and pyrrolidine. , Among all of these compounds, the adsorption and reaction of aniline is probably the most informative because it can involve both the phenyl ring and the primary amine group. In addition, the structure of this compound can potentially lead to the formation of molecular chains on silicon.…”

Section: Preparation Of Si–n Linkages On Oxide-free Silicon Single Cr...mentioning

confidence: 99%

“…Additional information on the multistep reactions leading to the formation of the Si–N linkages could be gathered from studies of other N-containing compounds such as cyano derivatives, isonitrile, N 2 H 4, NO, and hydrazoic acid (HN 3 ) , on clean silicon surfaces in UHV; however, a full description of these studies is beyond the scope of this article, and the work summarized above is sufficient to provide the key observations for the multistep chemical approach to the formation of Si–N linkages on silicon.…”

Section: Preparation Of Si–n Linkages On Oxide-free Silicon Single Cr...mentioning

confidence: 99%

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Silicon Surface Functionalization Targeting Si–N Linkages

Tian

Teplyakov

2012

Langmuir

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Silicon substrates have been a fascinating topic of fundamental and applied research for well over 50 years. They have attracted even more attention over the last couple of decades with advances in chemical functionalization that made oxide-free silicon surfaces a reality. Fundamentally new electronic properties and chemical reactivity became available, and the focus of chemical research turned more toward targeting specific chemical bonds and functionalities on silicon. Although thermodynamics clearly drives most processes under ambient conditions toward the formation of an oxide layer, kinetic control of the oxidation processes and thermodynamic tricks based on gaining stability of surface monolayers with high-density assembly have allowed for the formation of stable Si-C bonds and Si-O-C linkages on oxide-free silicon crystals. This feature article targets recent advances in making Si-N linkages on the same oxide-free single crystals. It covers the range of chemical approaches to achieving this goal and offers possible chemistry that can take advantage of the systems produced. The present status of the field and the future directions of its development will be considered.

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Section: Preparation Of Si–n Linkages On Oxide-free Silicon Single Cr...mentioning

confidence: 99%

Section: Preparation Of Si–n Linkages On Oxide-free Silicon Single Cr...mentioning

confidence: 99%

Silicon Surface Functionalization Targeting Si–N Linkages

Tian

Teplyakov

2012

Langmuir

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“…1, The attachment of unsaturated organic molecules through the dative bond has not been demonstrated. However, the ability of Si(100) to act as an electron acceptor was implied in the interaction of containing N molecules, including NH 3 39,40 and C 6 H 5 NH 2 [41][42][43][44] with Si surface. Theoretical calculations suggested that the interaction between the lone pair electrons on nitrogen atom and one end of a SidSi dimer via a transient dative bond weakens the N-H bond, subsequently causing the dissociative adsorption.…”

Section: Introductionmentioning

confidence: 99%

“…39,40 A similar mechanism was also proposed for other NH-containing molecules. [41][42][43][44] These experimental results and theoretical studies showed that the formation of the dative bond in NH-containing molecules is competitive, but the dissociative adsorption via the cleavage of the N-H bond is thermodynamically more favorable. Indeed, a similar dative-bonding scheme was evidenced in recent studies of amines adsorption on Si(100).…”

Section: Introductionmentioning

confidence: 99%

Dative and Di−σ Binding States of Pyridine on Si(100) and Their Thermal Stability

et al. 2003

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The chemical binding of pyridine on Si(100) has been studied using thermal desorption spectroscopy (TDS), X-ray phototelectron spectroscopy (XPS), high-resolution electron energy loss spectroscopy (HREELS), and DFT theoretical calculations. XPS results show two chemisorption states of pyridine with N 1s binding energies at 398.8 and 401.8 eV, attributable to the [4+2]-like cycloadduct with two σ-linkages of Si-N 1 and Si-C 4 , and the dative-bonded pyridine through the lone pair electrons of its N atom, respectively. These observations were further confirmed in our vibrational studies. The formation of a dative bond between pyridine and Si(100) demonstrates a new approach for the chemical attachment of unsaturated organic molecules on the Si surface. The 1,4-dihydropyridine-like cycloadduct formed at 350 K can be considered as a template for further modification and functionalization of Si surfaces or as an intermediate for syntheses in a vacuum.

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Characterization and simulation of organic adsorbates on the Si(100)(2 × 1)-surface using photoelectron spectroscopy and quantum mechanical calculations

Cited by 2 publications

References 4 publications

Silicon Surface Functionalization Targeting Si–N Linkages

Silicon Surface Functionalization Targeting Si–N Linkages

Dative and Di−σ Binding States of Pyridine on Si(100) and Their Thermal Stability

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