Characterization, Modeling, and Application of 10-kV SiC MOSFET

Wang, Jun; Zhao, Tiefu; Jun, Li; Huang, Alex Q.; Callanan, Robert; Husna, Fatima; Agarwal, Anant

doi:10.1109/ted.2008.926650

Cited by 338 publications

(114 citation statements)

References 20 publications

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“…At a research level, much higher voltage levels have been demonstrated for both bipolar and unipolar device technologies [10,11] and SiC trench gate technology MOSFETs are being developed [12,13]. In this paper, the focus is on commercial discrete transistors.…”

Section: Sic Versus Simentioning

confidence: 99%

SiC power MOSFETs performance, robustness and technology maturity

Castellazzi

Fayyaz

Romano

et al. 2016

Microelectronics Reliability

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Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discussed and partly demonstrated. Before their widespread use in the field, the transistors need to be thoroughly investigated and later validated for robustness and longer term stability and reliability. This paper proposes a review of commercial SiC power MOSFETs state-of-the-art characteristics and discusses trends and needs for further technology improvements, as well as device design and engineering advancements to meet the increasing demands of power electronics.

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Section: Sic Versus Simentioning

confidence: 99%

SiC power MOSFETs performance, robustness and technology maturity

Castellazzi

Fayyaz

Romano

et al. 2016

Microelectronics Reliability

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“…Spice software provides a typical MOSFET equivalent circuit model, as shown in Fig.1 (a). Reference [7] improved the typical MOSFET SPICE model according to the Sic MOSFET device characteristics, adding the temperature dependent voltage source and current source to compensate for static characteristic of Sic MOSFET, adding nonlinear capacitance between the gate and drain to describe the dynamic characteristics of Sic MOSFET. Reference [8] reuses the available built-in MOSFET models of the regular lateral MOSFET devices and propose a new model to depict the same behavior as expected by Sic device.…”

Section: The All Equivalent Circuit Modelmentioning

confidence: 99%

“…Improved model shown in Fig.1 (b). Reference [9][10][11] optimize the key parameters of the temperature dependent voltage source and current source of the model proposed by [7]. The new model is good for low temperature analysis to -25℃, which can operate for a wider temperature range.…”

Section: The All Equivalent Circuit Modelmentioning

confidence: 99%

Sic MOSFET Modeling and Simulation for Pspice

Zhu¹,

Xu²,

Jiao³

et al. 2015

Proceedings of the 2015 International Conference on Advances in Mechanical Engineering and Industrial Informatics

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Abstract. Sic (silicon carbide, Sic), represented by the third generation of semiconductor devices with its superior performance, has obvious advantages on the voltage level, working temperature, switching losses. Then the size, weight, cost of the power electronic conversion may be significantly decreased and making the performance of power electronic systems improved comprehensively. Sic MOSFET has aroused special attention, which shows a tremendous potential on high voltage, high power, high temperature applications. With the deepening of the research, building accurate Sic MOSFET device model is the key to power electronic circuit simulation. Accurate modeling is even more significant to help researchers know more information of device performance and do further design to take advantages of Sic MOSFET. In this paper, a simple PSpice model for Sic MOSFET, CMF20120 is presented, based on the large number of existing models of the power MOSFET discrete devices, according to CMF20120 library files provided by CREE incorporated company. As the comparisons among standard datasheet, the simulation results based on the proposed model match very well.

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“…Silicon carbide is another composite semiconductor that is well suited for high power and high voltage applications, with some devices operating up to 10 kV [37]. Like its wide-bandgap counterparts, it has demonstrated an extreme resistance to radiation damage [38].…”

Section: Silicon Carbidementioning

confidence: 99%