Characterization of 300 mm Low Temperature SiCN PVD Films for Hybrid Bonding application

Brun, Xavier F.; Hasan, Md. Mahmudul; Yang, Yi; Carazzetti, Patrik; Drechsel, Carl; Strolz, Ewald

doi:10.1109/ectc51909.2023.00098

Cited by 17 publications

(1 citation statement)

References 14 publications

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“…According to previous studies, SiCN has unique properties, including a high bonding energy after low-temperature annealing, the ability to suppress the formation of outgas-induced voids, and the ability to function as a superior diffusion barrier against Cu. 7,[17][18][19][20][21] Therefore, we investigated barrier CMP with a nonselective slurryleveling Cu pad height close to the SiCN layer as the target surface field material. In addition, this surface topography needs to be maintained throughout the process flow prior to the bonding.…”

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confidence: 99%

Minimizing Recess of Cu Pad on Hybrid Bonding with SiCN via Non-selective Chemical Mechanical Polishing and Post-cleaning Steps

Nakayama,

Hayama,

Tanaka

et al. 2024

ECS J. Solid State Sci. Technol.

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Hybrid bonding has become a promising approach to realizing fine pitch interconnection via bonding for both the wafer level and die level. The morphology and cleanliness of the bonding surface are critical to ensure a high yield. Therefore, surface planarization by chemical mechanical polishing (CMP) is considered a key process. The recess on the Cu pad must be controlled to be less than 5 nm by adjusting the removal rate between the Cu, the barrier layer, and the bonding dielectric layer. Conventionally, SiO2 has served as the bonding dielectric. However, SiCN is considered a promising dielectric because of its high bonding strength, suppression of voids, and ability to function as a Cu diffusion barrier. Here, we investigated simultaneous Cu, barrier, and SiCN CMP for hybrid bonding. Post-CMP processes such as cleaning and activation were also assessed. The results revealed that the removal rate of the three materials could be adjusted by dilution of the slurry and oxidizer. Lower selectivity was achieved at a certain dilution rate in an alkaline barrier slurry. Plasma activation revealed that the Cu passivation layer formed during cleaning was removed. Therefore, residues from CMP and post-CMP processes did not affect Cu prior to the hybrid bonding.

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