Characterization of 4in VGF-GaAs single crystals grown in a heater-magnet module

Glacki, Alexander; Dropka, Natasha; Frank‐Rotsch, Ch.; Juda, U.; Naumann, M.

doi:10.1016/j.jcrysgro.2014.03.050

Cited by 3 publications

(1 citation statement)

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“…In the past few years, successful control of the melt motion by TMF particularly boosted further development of VGF single-crystal growth. − TMF and its Lorentz forces alter the flow and the convective heat transport, particularly in the vicinity of the growing interface. The changed flow pattern affects the interface morphology by reducing the level of interface bending, as shown experimentally for Ge and GaAs and numerically for GaAs, Ge, Si, CdTe, and BaF 2 . − We also obtained promising numerical results of interface shaping by downward TMF during accelerated growth of 4 in. VGF GaAs over the range of crystal growth rates from 3 to 9 mm/h .…”

Section: Introductionsupporting

confidence: 57%

GaAs Vertical Gradient Freeze Process Intensification

Dropka

Glacki

Frank‐Rotsch

2014

Crystal Growth & Design

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The GaAs vertical gradient freeze (VGF) crystal growth process can be intensified in various ways, e.g., utilizing external fields, scaling up, numbering up the crucibles, etc. Successful application of traveling magnetic fields (TMFs) in 4 in. VGF GaAs growth for the flow control and process acceleration encouraged us to search for synergistic conceptions. Pros and cons of process scale up and numbering up under TMFs were addressed using threedimensional numerical simulations. The comparison of concepts was focused on the control of solid/liquid interface morphology and energy balance. A novel multicrucible furnace design was proposed and compared with a single-crucible design, both based on KRISTMAG technology. The simulation results showed the clear superiority of the numbering-up concept; e.g., the total energy consumption per run with equal yield was reduced to 32% of the value for the standard process. Moreover, a beneficial interface morphology was achievable without a trade-off with growth rates.

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