2015
DOI: 10.1007/s10854-015-3581-3
|View full text |Cite
|
Sign up to set email alerts
|

Characterization of a fast grown GaAs:Sn thin film by thermionic vacuum arc

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2016
2016
2020
2020

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(1 citation statement)
references
References 29 publications
0
1
0
Order By: Relevance
“…". Experiments with doping the GaAs semiconductor are presented in: [153] (Mo-doped GaAs on glass substrates), [154] (Sn-doped GaAs on glass substrates), [155] (Zn-doped GaAs on glass substrates), [156,157] (Si-doped GaAs on glass), [158] (C-doped GaAs on glass), [159] (B-doped GaAs on glass), [160] (In-doped GaAs on glass), [161] (Geand Mo-Ge-doped GaAs on glass), [162,163] (Co-doped GaAs on glass), [135] (Mg-doped GaAs on glass), [164] (Pb-doped GaAs on glass).…”
Section: Gallium-based Materialsmentioning
confidence: 99%
“…". Experiments with doping the GaAs semiconductor are presented in: [153] (Mo-doped GaAs on glass substrates), [154] (Sn-doped GaAs on glass substrates), [155] (Zn-doped GaAs on glass substrates), [156,157] (Si-doped GaAs on glass), [158] (C-doped GaAs on glass), [159] (B-doped GaAs on glass), [160] (In-doped GaAs on glass), [161] (Geand Mo-Ge-doped GaAs on glass), [162,163] (Co-doped GaAs on glass), [135] (Mg-doped GaAs on glass), [164] (Pb-doped GaAs on glass).…”
Section: Gallium-based Materialsmentioning
confidence: 99%