2001
DOI: 10.1007/s003400100513
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Characterization of a high-power tapered semiconductor amplifier system

Abstract: We have characterized a semiconductor amplifier laser system which provides up to 200 mW output after a single-mode optical fiber at 780 nm wavelength. The system is based on a tapered semiconductor gain element, which amplifies the output of a narrow-linewidth diode laser. Gain and saturation are discussed as a function of operating temperature and injection current. The spectral properties of the amplifier are investigated with a grating spectrometer. Amplified spontaneous emission (ASE) causes a spectral ba… Show more

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Cited by 27 publications
(24 citation statements)
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“…This turns out from the comparable injection efficiencies into a single mode fibre which is in the case of the TL approximately 51%. Similar injection values have been achieved with MOPA-systems [8].…”
Section: The Tapered Lasersupporting
confidence: 70%
See 1 more Smart Citation
“…This turns out from the comparable injection efficiencies into a single mode fibre which is in the case of the TL approximately 51%. Similar injection values have been achieved with MOPA-systems [8].…”
Section: The Tapered Lasersupporting
confidence: 70%
“…The TL provides a high output power and a narrow spectral bandwidth combined with a higher stability, yielding a better performance than self-seeded tapered amplifier lasers using a grating for wavelength discrimination. In addition, the TL offers a simplified setup compared to the well-established master-oscillator-power-amplifier (MOPA)-system [8]. Furthermore, we study three ECDL-systems which differ in their implemented medium power laser diode (<100mW), thus leading to different properties, such as wavelength tunability and output power of the lasers.…”
Section: Introductionmentioning
confidence: 99%
“…Obviously, the spontaneous emission rate will be a function of the bias condition, but it also may be altered by the injection of photons from an external source. This effect has been observed in other types of SOAs, and several theoretical explanations exist in the literature 7,8,9,10 . The basic premise behind this phenomenon is that the injected photons increase the photon density inside the cavity.…”
Section: Spontaneous Emissionsupporting
confidence: 57%
“…After spatial filtering with a single mode fiber, 1% of the power was in a broadband spectral component from spontaneous emission in the tapered amplifier [25]. To quantify the uncertainty in λ zero caused by this broadband component, we characterized the laser spectrum with a grating spectrometer and we accounted for the laser spectrum by modifying Eq.…”
mentioning
confidence: 99%