Characterization of a pixelated CdTe Timepix detector operated in ToT mode

Billoud, T. R. V.; Leroy, C.; Papadatos, C.; Pichotka, M.; Pospı́šil, S.; Roux, Jean-Samuel

doi:10.1088/1748-0221/12/01/p01018

Cited by 13 publications

(6 citation statements)

References 32 publications

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“…The Timepix3 Si operates under hole collection with a 100 V bias voltage, whereas the Timepix3 CdTe operates under electron collection with a -300 V bias voltage. These bias voltage values are those usually used for the detectors of the Medipix family [5]- [9]. Both Timepix3 detectors are controlled by the Katherine readout developed in cooperation between Faculty of Electrical Engineering, University of West Bohemia and IEAP, CTU [10].…”

Section: A Experimental Setupmentioning

confidence: 99%

Evaluation of Timepix3 Si and CdTe Hybrid-Pixel Detectors’ Spectrometric Performances on X- and Gamma-Rays

Amoyal

Ménesguen

Schoepff

et al. 2021

IEEE Trans. Nucl. Sci.

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Section: A Experimental Setupmentioning

confidence: 99%

Evaluation of Timepix3 Si and CdTe Hybrid-Pixel Detectors’ Spectrometric Performances on X- and Gamma-Rays

Amoyal

Ménesguen

Schoepff

et al. 2021

IEEE Trans. Nucl. Sci.

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“…Silicon has been the most used sensor material for hybrid detectors based on Timepix chip [1], in widespread applications [2][3][4][5], due to its well-established fabrication process, which allows creation of high-quality sensors for reasonable price. However, its rather low detection efficiency to X-rays from 15 keV (due to being low Z material) motivates the research of high Z sensor materials, like GaAs [6,7], CdTe [8] (CdZnTe). Semi-insulating (SI) GaAs is one of the most promising candidates due to its favourable properties; in comparison to Si it does have up to 20 times higher linear attenuation coefficient (figure 1) in the important energy range for soft tissue and material imaging (5 to 100 keV) and 3 to 5 times faster charge collection due to about 10 times higher electric field intensity within the sensor.…”

Section: Introductionmentioning

confidence: 99%

Performance of bulk semi-insulating GaAs-based sensor and its comparison to Si-based sensor for Timepix radiation camera

et al. 2019

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A: Nowadays, pixelated detectors based on Timepix readout chip play important role in various fields of science and research like particle physics, advanced spectrometry and especially X-ray imaging for medical and material purposes. Present work is focused on the evaluation of the 350 µm thick prototype (semi-insulating) SI GaAs sensor performance and its comparison to 300 µm thick Si sensor that was chosen as a reference. Both sensors consist of 256 × 256 pixels matrix with pixel pitch of 55 µm. We performed flat field illumination to test the pixel homogeneity and found out that the response of GaAs sensor is less homogeneous in terms of number of counts across the sensor compared to Si sensor. The imaging performance was tested using two samples of different absorption strength, specifically one less-absorbing sample and one more-absorbing sample. We found out that our fabricated SI GaAs sensor shows better imaging performance than Si sensor in case of imaging more-absorbing sample and vice versa. This is due to different prevalent detection efficiency regions. The spatial resolution was determined to be 8.73 lp/mm and 8.25 lp/mm for GaAs and Si sensor, respectively. Also, spectrometric measurements were carried out and results show that Si sensor has about 2 times higher energy resolution in comparison with SI GaAs sensor. K: X-ray detectors; Inspection with x-rays; X-ray radiography and digital radiography (DR)

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“…Among them, CdTe is a semiconductor with high atomic number, high density, wide energy band gap and high resistivity. These features make it suitable for room temperature operation with high detection efficiency for Xrays [23].…”

Section: The Timepix3 Detectormentioning

confidence: 99%

Energy sensitive X-ray phase contrast imaging with a CdTe-Timepix3 detector

Navarrete

Procz²,

Fey³

et al. 2019

2019 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

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The Timepix3 is a photon counting semiconductor detector that enables to simultaneously measure the energy and time of arrival of each incident X-ray photon. These properties, along with the high spatial resolution and high efficiency, due to the CdTe sensor material, can be exploited for several imaging applications, such as X-ray phase contrast imaging (XPCI). XPCI relies on the phase shift suffered by X-rays when traversing the sample. This study focuses on the free-space propagation XPCI and single mask edge illumination XPCI methods, which are two approaches that are well suited for laboratory implementations. Since both techniques are highly sensitive to charge-sharing, the Timepix3 energy and time information for each photon are used to minimize this effect by using pixel clustering methods. In addition, the performance of both XPCI techniques across a 30kVp source spectrum is studied using the energy-resolving capabilities of the detector. In both cases, the phase contrast and signal-to-noise ratio (SNR) are assessed as a function of different energy. Finally, it is demonstrated that phase contrast enhancement is feasible with pixel clustering and energy-selection for both XPCI techniques.

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Characterization of a pixelated CdTe Timepix detector operated in ToT mode

Abstract: Development and characterization of high-resolution neutron pixel detectors based on Timepix read-out chips F. Krejci, J. Zemlicka, J. Jakubek et al. On the possibility to use semiconductive hybrid pixel detectors for study of radiation belt of the Earth.

Cited by 13 publications

References 32 publications

Evaluation of Timepix3 Si and CdTe Hybrid-Pixel Detectors’ Spectrometric Performances on X- and Gamma-Rays

Evaluation of Timepix3 Si and CdTe Hybrid-Pixel Detectors’ Spectrometric Performances on X- and Gamma-Rays

Performance of bulk semi-insulating GaAs-based sensor and its comparison to Si-based sensor for Timepix radiation camera

Energy sensitive X-ray phase contrast imaging with a CdTe-Timepix3 detector

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