1998
DOI: 10.1117/12.308771
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Characterization of a positive chemically amplified photoresist for process control

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Cited by 6 publications
(3 citation statements)
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“…Adding shrinkage characterization to the understanding of bake and development will significantly improve our understanding of lithography resist processing. This volume shrinkage manifests itself in the form of thickness loss, and ithas been shown that this shrinkage is directly proportional to the deprotection of the resist in flood exposed films [3].…”
Section: Introductionmentioning
confidence: 99%
“…Adding shrinkage characterization to the understanding of bake and development will significantly improve our understanding of lithography resist processing. This volume shrinkage manifests itself in the form of thickness loss, and ithas been shown that this shrinkage is directly proportional to the deprotection of the resist in flood exposed films [3].…”
Section: Introductionmentioning
confidence: 99%
“…Thus the photoresist is usually made more sensitive by only partially blocking the resin. [1] The mechanism of action of negative photoresists is mainly based on insertion/crosslinking reaction of reactive nitrene intermediate obtained from the bisazide photoactive component with a polymer. This renders the exposed regions more insoluble by increasing the molecular weight.…”
Section: General Mechanism For Carsmentioning
confidence: 99%
“…1 This observation was very useful, since it allowed for quicker measurements through in-line thickness metrology tools, such as ellipsometry, rather than the more time consuming Fourier transform infrared spectroscopy (FTIR). A good estimate of the deprotection level is essential for any resist modeling exercise.…”
Section: Introductionmentioning
confidence: 99%