Characterization of active pixel sensors in 0.25 /spl mu/m CMOS technology

Velthuis, J. J.; Allport, P. P.; Casse, G.; Evans, A. O.; Turchetta, R.; Tyndel, M.; Villani, G.

doi:10.1109/tns.2005.856915

Cited by 17 publications

(9 citation statements)

References 8 publications

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“…wafer showed minimal degradation in the overall performance of the sensor. 11 Tiling only four 10 cmϫ 12 cm detectors can provide an active area suitable for mammography ͑20 cm ϫ 24 cm͒. Such tiling of four detectors is a concern and would need to be carefully addressed.…”

Section: Discussionmentioning

confidence: 99%

“…Rad-hard sensors have already been presented. [9][10][11] Large sensors, up to wafer scale, can today be produced by using "stitching," a technique that is already mature and allows creation of seamless devices that are larger than the reticle used in CMOS process, i.e., about 2 cmϫ 2 cm. This can also be performed for a very small pixel size 12 ͑less than 10 m͒ and is able to produce a sensor with an active area up to 12 cmϫ 12 cm.…”

Section: Introductionmentioning

confidence: 99%

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Empirical electro‐optical and x‐ray performance evaluation of CMOS active pixels sensor for low dose, high resolution x‐ray medical imaging

et al. 2007

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Monolithic complementary metal oxide semiconductor (CMOS) active pixel sensors with high performance have gained attention in the last few years in many scientific and space applications. In order to evaluate the increasing capabilities of this technology, in particular where low dose high resolution x-ray medical imaging is required, critical electro-optical and physical x-ray performance evaluation was determined. The electro-optical performance includes read noise, full well capacity, interacting quantum efficiency, and pixels cross talk. The x-ray performance, including x-ray sensitivity, modulation transfer function, noise power spectrum, and detection quantum efficiency, has been evaluated in the mammographic energy range. The sensor is a 525 x 525 standard three transistor CMOS active pixel sensor array with more than 75% fill factor and 25 x 25 microm pixel pitch. Reading at 10 f/s, it is found that the sensor has 114 electrons total additive noise, 10(5) electrons full well capacity with shot noise limited operation, and 34% interacting quantum efficiency at 530 nm. Two different structured CsI:Tl phosphors with thickness 95 and 115 microm, respectively, have been optically coupled via a fiber optic plate to the array resulting in two different system configurations. The sensitivity of the two different system configurations was 43 and 47 electrons per x-ray incident on the sensor. The MTF at 10% of the two different system configurations was 9.5 and 9 cycles/mm with detective quantum efficiency of 0.45 and 0.48, respectively, close to zero frequency at approximately 0.44 microC/kg (1.72 mR) detector entrance exposure. The detector was quantum limited at low spatial frequencies and its performance was comparable with high resolution a: Si and charge coupled device based x-ray imagers. The detector also demonstrates almost an order of magnitude lower noise than active matrix flat panel imagers. The results suggest that CMOS active pixel sensors when coupled to structured CsI:Tl can be used for conventional and advanced digital mammography due to their low noise, high resolution performance.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Empirical electro‐optical and x‐ray performance evaluation of CMOS active pixels sensor for low dose, high resolution x‐ray medical imaging

et al. 2007

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“…A much higher radiation tolerance was reported for a sensor built in a 0.25 µm CMOS process with an 8 µm epitaxial layer [65]. It hosted different kinds of 3T-pixels with 15 µm pitch and diodes of either 3 × 3 µm 2 or 1.2 × 1.2 µm 2 surface.…”

Section: Charge Collection Efficiency Gain and Noisementioning

confidence: 99%

“…The use of multiple diodes has repeatedly been considered as a mean to improve the charge collection performances of CPS. Therefore, the technology was implemented into various early sensor prototypes [1,39,65]. The obvious draw back of the approach consists in the additional leakage current and increased pixel capacitance, which can be considered to scale approximatively with the number of diodes connected in parallel.…”

Section: Pixels With Multiple Parallel Collection Diodesmentioning

confidence: 99%

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

Deveaux

2019

J. Inst.

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A: CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate sensing elements together with analogue and digital data processing circuits into one monolithic chip. This turns into 50 µm thin sensors, which provide an outstanding typical spatial resolution of few µm and a detection efficiency for minimum ionizing particles above 99.9%. The radiation tolerance of CPS was initially constrained by the limits of the CMOS processes used for their production but has been improved by orders of magnitudes during the last years.This work reviews the related R&D on the radiation tolerance of traditional CPS with partially depleted active medium as pioneered by the MIMOSA-series developed by the IPHC Strasbourg. Procedures for assessing radiation damage in those non-standard pixels are discussed and the major mechanisms of radiation damage are introduced. Techniques for radiation hardening are shown. Moreover, recent results on next generation CPS featuring fully depleted sensors based on improved CMOS processes are summarized.

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“…A much higher radiation tolerance was reported for a sensor built in a 0.25 µm CMOS process with an 8 µm epitaxial layer [66]. It hosted dierent kinds of 3T-pixels with 15 µm pitch and diodes of either 3×3 µm 2 or 1.2×1.2 µm 2 surface.…”

Section: Charge Collection Eciency Gain and Noisementioning

confidence: 99%

On the radiation tolerance of CMOS Monolithic Active Pixel Sensors with partially depleted active volume

Deveaux¹

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CMOS Monolithic Active Pixel Sensors for charged particle tracking (CPS) form are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Unlike to most other silicon radiation detectors, they rely on standard CMOS technology. This cost efficient approach allows for building particularly small and thin pixels but also introduced, until recently, substantially constraints on the design of the sensors. The most important among them is the missing compatibility with the use of PMOS transistors and depleted charge collection diodes in the pixel. Traditional CPS were thus first of all suited for vertex detectors of relativistic heavy ion and particle physics experiments, which require highest tracking accuracy in combination with moderate time resolution and radiation tolerance. This work reviews the R&D on understanding and improving the radiation tolerance of traditional CPS with non- and partially depleted active medium as pioneered by the MIMOSA-series developed by the IPHC Strasbourg. It introduces the specific measurement methods used to assess the radiation tolerance of those non-standard pixels. Moreover, it discusses the major mechanisms of radiation damage and procedures for radiation hardening, which allowed to extend the radiation tolerance of the devices by more than an order of magnitude.

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Characterization of active pixel sensors in 0.25 /spl mu/m CMOS technology

Cited by 17 publications

References 8 publications

Empirical electro‐optical and x‐ray performance evaluation of CMOS active pixels sensor for low dose, high resolution x‐ray medical imaging

Empirical electro‐optical and x‐ray performance evaluation of CMOS active pixels sensor for low dose, high resolution x‐ray medical imaging

Progress on the radiation tolerance of CMOS Monolithic Active Pixel Sensors

On the radiation tolerance of CMOS Monolithic Active Pixel Sensors with partially depleted active volume

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