Characterization of AgInTe2 films grown by a hot wall epitaxy technique on KCl substrates

Ab initio study of structural phase transformations and band gap of chalcopyrite phase in AgInTe2 under high pressure

“…This occurred due to a crystal-field splitting which was directly affected by a different interaction between Ag-Te and In-Te. This result also corresponds with those from the previous experiments [19,20].…”

Structural and thermoelectric properties of fine-grained Bi0.4Te3.0Sb1.6 thin films with preferred orientation deposited by flash evaporation method

“…Therefore, the key issue of micro-thermoelectric devices is how to fabricate thin films with high performance. We consider that thin films with high electrical conductivity can be achieved by reducing the electron scattering at the grain boundaries [13][14][15]. Of the various methods for fabricating bismuth-telluride based thin films, the flash evaporation method has the advantage of easily controlling the grain size.…”

Designing for dopability in semiconducting AgInTe2

“…The Seebeck coefficient shows little change when Ge is added. The modest increase in carrier concentration does not necessarily mean that only 10 15 Ge In cm À3 were incorporated into the lattice. Rather, examination of Fig.…”

“…13,14 Hall measurements show a low carrier concentration (10 14 -10 17 h + /cm À3 ) and a significant variation in hole mobility (10-1000 cm 2 V À1 s À1 ). 13,15 Photoconductivity measurements indicate a B0.95 eV gap. 16,17 n-Type behavior has been observed for samples annealed under vacuum and sporadically when annealed under Cd-vapor, though without a consistent trend or mechanistic understanding.…”