Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

Nohira, Hiroshi; Tsai, Wu‐ting; Besling, W.; Young, E.; Pétry, J.; Conard, Thierry; Vandervorst, Wilfried; Gendt, Stefan De; Heyns, Marc; Maes, Jan Willem; Tuominen, M.

doi:10.1016/s0022-3093(02)00970-5

Cited by 189 publications

(78 citation statements)

References 11 publications

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“…Nevertheless, the ZrCl 4 /H 2 O process has been most frequently studied. [8][9][10][11][12][13] Besides halide, alkoxide or ␤-diketonate-type of precursors, cyclopentadienyl compounds may be employed and they offer an interesting alternative for ALD precursors because of their reactivity and volatility. Recently, we have introduced the use of Cp 2 Zr(CH 3 ) 2 (Cpϭcyclopentadienyl, C 5 H 5 ) together with water 14 or ozone 15 as precursors to produce high quality ZrO 2 thin films atomic layer deposited at rather low temperatures.…”

Section: Introductionmentioning

confidence: 99%

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

Niinistö¹,

Putkonen²,

Niinistö³

et al. 2004

Journal of Applied Physics

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ZrO 2 thin films with thicknesses below 20 nm were deposited by the atomic layer deposition process on Si(100) substrates at 350 °C. An organometallic precursor, Cp2Zr(CH3)2 (Cp=cyclopentadienyl, C5H5) was used as the zirconium source and water or ozone as oxygen source. The influence of oxygen source and substrate pretreatment on the dielectric properties of ZrO2 films was investigated. Structural characterization with high-resolution transmission electron microscopy was performed to films grown onto HF-etched or native oxide covered silicon. Strong inhibition of ZrO2 film growth was observed with the water process on HF-etched Si. Ozone process on HF-etched Si resulted in interfacial SiO2 formation between the dense and uniform film and the substrate while water process produced interfacial layer with intermixing of SiO2 and ZrO2. The effective permittivity of ZrO2 in Al/ZrO2/Si/Al capacitor structures was dependent on the ZrO2 layer thickness and oxygen source used. The interfacial layer formation increased the capacitance equivalent oxide thickness (CET). CET of 2.0 nm was achieved with 5.9 nm ZrO2 film deposited with the H2O process on HF-stripped Si. The ozone-processed films showed good dielectric properties such as low hysteresis and nearly ideal flatband voltage. The leakage current density was lower and breakdown field higher for the ozone-processed ZrO2 films.

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Section: Introductionmentioning

confidence: 99%

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

Niinistö¹,

Putkonen²,

Niinistö³

et al. 2004

Journal of Applied Physics

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“…One obtains E g as 5.30 ± 0.3 eV and 4.97 ± 0.3 eV on the O1s and Zr3d loss spectrum respectively, showing a good consistency between each other. They are comparable to the direct band-gap energy of ZrO2 [16][17][18].…”

Section: Optical Transitions Of Zirconia Matrix From Eel Spectramentioning

confidence: 55%

Optical absorption in ZrO_2–x‐C nanocomposite films on polymer substrates: application of an effective medium theory

Cheyssac¹,

Laidani²,

Anderle³

2008

Phys. Status Solidi (c)

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RF sputtering from separate zirconia and graphite targets enables room‐temperature co‐deposition of ZrO2–x and carbon onto polycarbonate substrates. Films consist of amorphous carbon dispersed in tetragonal nanocrystalline zirconia; their optical properties have been determined by reflectance measurements at normal incidence and over the visible range. The optical constants of each component of the composite have been extracted; the experimental reflectance spectra have been fitted to Maxwell‐Garnett effective medium theory, leading to the effective dielectric constants of the film. Absorption is characterized by the band gap, the energy and lifetime of the optical transition of the absorbing carbon phase. These parameters are deduced from the imaginary part of the dielectric function using Tauc‐Lorentz model (TL) and from the extinction coefficient using Forouhi‐Bloomer model (FB) in which an energy dependence of the matrix element of the transition has been introduced. Furthermore, the energies of the peak transition and the maximum of the extinction coefficient are so similar that they prove the self‐consistency of the modified‐FB model applied to the amorphous carbon phase of the composite films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…14) and 3.2m.2eV respectively. After compensation for the charging effect due to the insulating layer, the valence band offsets are 2.9M.2eV and 2.5B.2eV for A1203 and Z r O 2 respectively [18]. The valence band offsets are smaller than reported by Afanas'ev et al [19], who found 3.25 and 3.leV respectively.…”

Section: Determination Of the Bandgapmentioning

confidence: 59%

Physical characterisation of high-k gate stacks deposited on HF-last surfaces

Bender

Conard²,

Nohira³

et al.

Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537)

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Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

Cited by 189 publications

References 11 publications

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

Optical absorption in ZrO_2–x‐C nanocomposite films on polymer substrates: application of an effective medium theory

Physical characterisation of high-k gate stacks deposited on HF-last surfaces

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Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

Cited by 189 publications

References 11 publications

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

Optical absorption in ZrO2–x‐C nanocomposite films on polymer substrates: application of an effective medium theory

Physical characterisation of high-k gate stacks deposited on HF-last surfaces

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Optical absorption in ZrO_2–x‐C nanocomposite films on polymer substrates: application of an effective medium theory