Characterization of AlGaN/GaN structures on various substrates grown by radio frequency-plasma assisted molecular beam epitaxy

AlGaN based high electron mobility transistors

“…They were all grown by MOCVD on 3-inch Si substrates. Because of the large lattice mismatch and thermal mismatch between Si and GaN, a thin AlN layer was grown as an intermediate layer between Si and GaN in order to reduce the defects due to such mismatch [15][16][17][18] before further layer can be grown. After the first AlN layer growth, a thin SiN layer was introduced using silance (SiH4) flow of 65 sccm diluted to 200 ppm with hydrogen (H2).…”

Growth and characterization of GaN/AlGaN high-electron mobility transistors grown on p-type Si substrates

“…They were all grown by MOVPE and choose Si (1 1 1) as our substrates. Because of the large lattice mismatch and thermal mismatch between Si and GaN [12][13][14][15][16], few AlN layers were grown as intermediate layers between Si and GaN in order to lower down the defects due to such mismatch [17,18]. After that, a SiN treatment was introduced using silance (SiH 4 ) flow of 50 sccm diluted to 100 ppm with H 2 .…”

“…However, Si can also be regarded as an alternative to commercial sapphire substrates for nitridebased devices owing to its low cost and large wafer size. It is known that good-quality GaN films on a Si substrate are very difficult to achieve due to the large lattice mismatch (17%) and thermal mismatch (54%) between GaN and Si [12][13][14][15][16]. It is also known that an AlN layer as an intermediate and nucleation layer can greatly enhance the quality of GaN films [17,18].…”

High Electron Mobility Transistors Using AlGaN Materials

“…They were all grown by MOCVD on 3-inch Si substrates. Because of the large lattice mismatch and thermal mismatch between Si and GaN, a thin AlN layer was grown as an intermediate layer between Si and GaN in order to reduce the defects due to such mismatch [15][16][17][18] before further layer can be grown. After the first AlN layer growth, a thin SiN layer was introduced using silance (SiH4) flow of 65 sccm diluted to 200 ppm with hydrogen (H2).…”