Characterization of AlGaN, Te‐doped GaN and Mg‐doped GaN grown by hydride vapor phase epitaxy

Abstract

The AlxGa1–xN, Te‐doped GaN and Mg‐doped GaN layers on GaN/Al2O3 substrates are grown by mixed‐source hydride vapor phase epitaxy (HVPE) method. The metallic Ga mixed with Al is used as group III source material to get the AlxGa1–xN layers. The values of the compositions x of the AlxGa1–xN layers characterized by X‐ray diffraction (XRD) measurements are 0.6% ∼ 80% at the various temperatures of the source zone. The metallic Ga mixed with Te (or Mg) is used as source material for n‐type (or p‐type) doping. The electron concentrations of the Te‐doped GaN layers are varied from 1.8 × 1017 to 8.3 × 1018/cm3. The hole concentrations of the Mg‐doped GaN layers are varied from 1.5 × 1016 to 3.2 × 1016/cm3. We find that the mixed‐source HVPE method is suitable to get a thick AlGaN layer with an arbitrary composition, a Te‐doped GaN layer with a high n‐type concentration and a Mg‐doped GaN layer with p‐type concentration. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)