Characterization of AlN/SiC Epitaxial Wafers Fabricated by Hydride Vapour Phase Epitaxy

Growth of thick AlN layers by hydride vapor-phase epitaxy

“…This result indicates that higher growth temperatures are essential to grow a high-quality AlN layer. The FWHM of AlN layer grown at 1100 1C is still large compared to that of AlN grown on a SiC substrate [12,13]. This difference is thought to be due to direct growth of AlN on the sapphire substrate.…”

“…Since the size and shape of the grown layer depends on the substrate used, HVPE of AlN is also worth investigating. However, investigations concerning HVPE of AlN have been limited [11][12][13][14][15]. This is primarily due to the fact that the molten Al or hot AlCl gas generated by the reaction between Al metal and HCl gas is very reactive and easily reduces the quartz (SiO 2 ) reactor.…”

“…Exploiting this fact, a research group at TDI, Inc. and the authors have independently succeeded in HVPE of AlN using a conventional hot-wall quartz reactor [11][12][13][14][15]. However, little has been clarified about the influences of growth temperature and growth rate on the crystalline quality of AlN layers.…”

Thermodynamic and experimental investigations on the growth of thick aluminum nitride layers by high temperature CVD

“…Then, AlN epitaxial layers were obtained by reaction between anhydrous aluminum chloride and ammonia in 1967 and 1968 [5,6] or by direct reaction of the adduct compound AlCl 3 .NH 3 between 1970 and 1977 [7][8][9]. Since 1972, epitaxial growth of AlN on Sapphire and SiC substrates by a vapor phase epitaxy process using Al, HCl and NH 3 have been studied at temperature of about 1100 C [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28]. Since 2007, several studies have been investigated to increase AlN layers crystalline quality and growth rate by increasing deposition temperature [29][30][31][32][33][34][35].…”

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

“…It was successfully developed by Slack and McNelly [13,14] in the mid-1970s. Several methods such as pulsed laser deposition (PLD) [15], chemical vapor deposition (CVD and MOCVD) [16] or hydride vapor phase epitaxy (HVPE) [17][18][19][20], molecular beam epitaxy (MBE) [21] and magnetron sputtering [22] have been employed for deposition of AlN thin or thick films for different applications. Important issues for deposition techniques [23][24][25][26] of the functional layers are: (1) large area deposition; (2) crystallinity of the grown layers; (3) residual stress and strain; (4) strain gradients in the multilayer architecture and (5) surface and interface morphology.…”