Characterization of an irradiated double-sided silicon strip detector with fast binary readout electronics in a pion beam

Unno, Y.; Kohriki, T.; Kendo, T.; Iwasaki, H.; Terada, S.; Takahata, M.; Tamura, Naoyuki; Maeohmichi, H.; Ohmoto, T.; Yoshikawa, Masahito; Ohyama, H.; Handa, T.; Iwata, Y.; Ohsugi, T.; Haber, C.; Siegrist, J.; Spieler, H.; Dubbs, T.; Grillo, A. A.; Hubbard, B.; Kashigin, S.; Kroeger, W.; Noble, K.; O’Shaughnessy, K.; Pulliam, T.; Rowe, W.A.; Sadrozinski, H. F-W.; Seiden, A.; Spencer, E.; Webster, A.; Wichmann, Romy; Wilder, M.; Takashima, R.

doi:10.1109/23.506659

Cited by 16 publications

(2 citation statements)

References 9 publications

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“…The results are shown in Figure 7. Similar measurement b y groups working towards the development of detectors for the SSC [8] and the LHC [7] are in agreement with our ndings.…”

Section: Radiation Hardness Studiessupporting

confidence: 82%

The CDF SVX-II upgrade for the Tevatron run II

Bortoletto

1997

Nuclear Instruments and Methods in Physics Research Section A:

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A microstrip silicon detector SVX II has been proposed for the upgrade of CDF to be installed in 1999 for Run II of the Tevatron. Three barrels of ve l a y ers of doublesided silicon microstrip detectors will cover the interaction region. A description of the project status will be presented. Emphasis will be given to the R&D program for silicon sensors which includes capacitance minimization, the study of coupling capacitor integrity, the operation of the detectors in conjunction with the SVXH and SVX2 readout chips in two beam tests and the determination of the detectors performance deterioration due to radiation damage.

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“…The results are shown in Figure 7. Similar measurement b y groups working towards the development of detectors for the SSC [8] and the LHC [7] are in agreement with our ndings.…”

Section: Radiation Hardness Studiessupporting

confidence: 82%

The CDF SVX-II upgrade for the Tevatron run II

Bortoletto

1997

Nuclear Instruments and Methods in Physics Research Section A:

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“…A radiation-tolerant design has been developed including the development of structures sustaining higher bias voltages and improvement in reducing the high electric field at the edges of implantation [2]. The radiation-tolerant silicon strip detectors developed have been evaluated, starting from the double-sided detector [3], and then the single-sided detectors with n-strip readout [4].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of radiation damaged p-in-n and n-in-n silicon microstrip detectors

Unno

Yamashita²,

Terada

et al. 1999

IEEE Trans. Nucl. Sci.

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Two pin -n and one n-inn silicon microstrip detectors were radiation-damaged and tested in a beam. A comparison was made between the pin -n and the n-inn in high resistivity wafers, and the pin -n in a low and a high resistivity wafer. The charge collection showed a clear difference in the n-inn and the pin -n detectors, which suggested that the signals were shared between strips more in the irradiated pin -n detectors. Although a difference of the low and the high resistivity wafers was observed in the body capacitance measurement, little difference was observed in the beamtest results.

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