Characterization of As2(Se1−xSx)3 series glass system

Wu, Chi‐Jui; Ho, Ching‐Hwa; Yu, Mingyang; Chou, Wen-Chuang

doi:10.1016/j.jallcom.2006.03.032

Cited by 2 publications

(1 citation statement)

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“…Особенность пленок ХСП тройного состава As−S−Se состоит в плавном изменении их оптических и химических свойств посредством изменения процентного содержания Se. Так, в наиболее изученной системе As 40 S 60−x Se x [8][9][10][11][12] при изменении x от 0 до 60 ширина запрещенной зоны (E g ) изменяется между значениями E g , соответствующими As 2 S 3 и As 2 Se 3 [11,13]. Это, в частности, позволяет подобрать состав регистрирующей пленки As−S−Se, наиболее подходящий к используемому лазерному излучению.…”

Section: Introductionunclassified

Влияние поля коронного разряда на формирование голографических дифракционных решеток в пленках As-=SUB=-40-=/SUB=-S-=SUB=-60-x-=/SUB=-Se-=SUB=-x-=/SUB=-

Настас¹,

Иову²,

Присакар³

et al. 2023

Журнал Технической Физики

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The influence of the corona discharge on the holographic recording and the subsequence chemical etching of the recording holographic gratings in the Cr/As40S60-xSex thin film structures was investigated. It was established that applied of the positive corona discharge leads to the increase of the holographic sensitivity during the recording in the As-S-Se films, as well as to the amplification of the diffraction efficiency of the recording gratings and of the relief-phase diffractive gratings obtaining in the result of the consecutive chemical etching. Among the investigated films of the As40S60-xSex system, the best results on the application of the Argon laser irradiation (=488 nm) was obtaining for the composition As40S39Se21. Applied of the corona discharge bring to the increase of the holographic sensitivity more than up two order, and of the diffraction efficiency about three order in the respect of the of the ordinary recording. Reciprocally was reached a amplification of the diffraction efficiency of the relief diffraction gratings formed in the result of the sequent chemical etching up to 30 %.

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Section: Introductionunclassified