2021
DOI: 10.1016/j.jeurceramsoc.2021.03.047
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Characterization of B4C-SiC ceramic composites prepared by ultra-high pressure sintering

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Cited by 31 publications
(10 citation statements)
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“…63 Recently, a so-called ultra-high pressure (4 GPa) sintering method has been developed to successfully prepare additive-free B 4 C-SiC ceramics at a low temperature (1500 1C). 64 It is noteworthy that the pressure applied during ultra-high pressure sintering is significantly higher than the pressures applied during HP and SPS, leading to the rapid densification of B 4 C-SiC ceramics. This phenomenon results from the fact that the ultra-high pressure sintering allows the reduction of distance between the grains and endures the improvement of contact between individual grains resulting in plastic deformation.…”
Section: Sintering Methods Of B 4 C-sic Composite Ceramicsmentioning
confidence: 99%
See 1 more Smart Citation
“…63 Recently, a so-called ultra-high pressure (4 GPa) sintering method has been developed to successfully prepare additive-free B 4 C-SiC ceramics at a low temperature (1500 1C). 64 It is noteworthy that the pressure applied during ultra-high pressure sintering is significantly higher than the pressures applied during HP and SPS, leading to the rapid densification of B 4 C-SiC ceramics. This phenomenon results from the fact that the ultra-high pressure sintering allows the reduction of distance between the grains and endures the improvement of contact between individual grains resulting in plastic deformation.…”
Section: Sintering Methods Of B 4 C-sic Composite Ceramicsmentioning
confidence: 99%
“…Generally, the grain boundary is clean when the ceramics are produced by a solid-state sintering mechanism, 133 whereas the intergranular phase exists at the grain boundary when the sintering mechanism is liquidphase sintering. 134,135 For the phase boundary of B 4 C-SiC ceramics, Matovic ´et al 64 found that there is no amorphous phase or secondary phase at the phase boundary of the ultra-high pressure sintered B 4 C-SiC ceramics without sintering aids. Both Zhang et al 136 and Zhu et al 107 observed that the phase boundary between B 4 C and SiC grains in the pressureless sintered B 4 C-SiC ceramics with the sintering aid of carbon black is clean and clear (Fig.…”
Section: Microstructure Characteristics Of B 4 C-sic Composite Ceramicsmentioning
confidence: 99%
“…The addition of a second phase is an effective approach to solving the above issues. To enhance the sinterability and mechanical properties of B 4 C ceramic, a variety of sintering additives such as WB 2 , 10 SiC, 11 TiC, 12 carbon nanotube, 13,14 Ti 3 SiC 2 , 15 and TiB 2 , 16–18 are incorporated into B 4 C matrix. Among them, TiB 2 is a promising sintering additive for B 4 C due to its high electrical conductivity, good chemical and thermal stability, high hardness, and moderate density 19,20 .…”
Section: Introductionmentioning
confidence: 99%
“…Boron carbide has interesting combination of properties such as high melting point (2445 °C), low density (2.5 g/cm 3 ), high hardness, good resistance against chemical agents, high wear resistance, good modulus of elasticity, high neutron absorption and high impact resistance [1][2][3][4]. This material is widely used in industry and has become one of the most important and strategic engineering ceramics [5][6][7].…”
Section: Introductionmentioning
confidence: 99%