Characterization of beryllium-doped molecular beam epitaxial grown GaAs by photoluminescence

Electrical characteristics of Mg-doped GaAs epitaxial layers grown by molecular beam epitaxy

“…In general, the incorporation of doping elements is strongly dependent on the arrival rate, the adsorption lifetime, and the condensation coefficient of the element on a particular substrate surface. Beryllium (Be) has been widely used as the most convenient and controllable acceptor species for GaAs [2][3][4][5] due to its near-unity sticking coefficient and low vapor pressure at the usual growth temperatures of molecular beam epitaxy (MBE). Magnesium (Mg) occupies cation sites and is a shallow acceptor in III-V semiconductors with an ionization energy of 28 meV in GaAs and 41 meV in InP [6].…”

Influence of p-doping on the temperature dependence of InAs/GaAs quantum dot excited state radiative lifetime

“…Although the doping level corresponds to 10 holes/QD, the Be doping density is an order of magnitude below that for which nonradiative mechanisms in the bulk GaAs are enhanced. 15 The samples are excited by 790 nm 2.4 ps pulses from a Ti:Al 2 O 3 laser at temperatures from 12 K to 300 K. PL is collected and dispersed by a monochromator and detected either using an LN 2 cooled Ge photodiode with lock-in detection (for the time integrated measurements) or by passing a 1 meV band to a microchannel plate with an extended S1 response using time-correlated single photon counting.…”

Effect of rapid thermal annealing on behavior of nitrogen in GaAsN alloys

“…Semiconductors based on GaAs have attracted attention for potential applications in optoelectronic devices [1][2][3][4]. Recent researches further revealed that a small amount of N in GaAs can drastically reduce the band gap [5][6][7] with a bowing coefficient as large as 20 eV.…”