Characterization of breakdown behavior of diamond Schottky barrier diodes using impact ionization coefficients

Abstract

International audienc

Thermal management and switching performance of β-Ga2O3 vertical FinFET with diamond-gate structure

“…Electron lifetime in β-Ga 2 O 3 [35] 176 ps Hole lifetime in β-Ga 2 O 3 [35] 176 ps Electron lifetime in diamond [36] 200 ps Hole lifetime in diamond [36] 200 ps Incomplete ionization: Silicon ionization energy in β-Ga 2 O 3 [37] 52 meV Silicon ionization energy coefficient in β-Ga 2 O 3 [37] 3.40 × 10 −8 eV Boron ionization energy in diamond [30] 390 meV Boron ionization energy coefficient in diamond [38] 4.79 × 10 −8 eV boundary thermal resistance and drain electrode are set to 300 K. According to different gate voltage biases, the device can achieve very low R ON (2.23 mΩ cm 2 ). It can be seen that when the current density is greater than 800 A cm −2 , the device has a clear SHE, resulting in a decrease in the saturation drain current density.…”