Characterization of buried cobalt silicide layers in Si by MEVVA implantation

Peng, Qiang; Wong, S. P.; Wilson, I.; Wang, Ning; Fung, Kwok Kwong

doi:10.1016/0040-6090(95)06830-9

Cited by 13 publications

(2 citation statements)

References 17 publications

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“…In these micrographs, the CoSi 2 precipitates formed in these samples are clearly seen. The selected area diffraction (SAD) patterns of these samples all show the same features as those reported in the literature [6,8]. A typical SAD pattern corresponding to the sample with T S of 210 • C is shown in figure 2.…”

Section: Resultssupporting

confidence: 70%

“…However, one major difficulty of the IBS technique is the high dose required to form a continuous CoSi 2 layer. Recently, there have been a few reports on the study of IBS of CoSi 2 using implantation with a metal vapour vacuum arc (MEVVA) ion source [7][8][9][10]. The broad beam and high current capabilities of the MEVVA ion source, which was developed in the mid-1980s [11], have made it particularly attractive for IBS applications.…”

Section: Introductionmentioning

confidence: 99%

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Effect of substrate temperature on precipitate coarsening and Co distribution in Si implanted by Co ions with a metal vapour vacuum arc ion source

Wong¹,

Peng²,

Cheung³

et al. 1998

Semicond. Sci. Technol.

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Ion beam synthesis of CoSi 2 by Co implantation with a metal vapour vacuum arc ion source has been performed and the effects of substrate temperature on precipitate coarsening and Co distribution in the as-implanted samples have been investigated. The microstructure changes were studied by transmission electron microscopy and the Co distribution shift towards the surface with increasing substrate temperature was observed by Rutherford backscattering spectrometry experiments. Direct measurements of the sputtering depth on masked implanted samples at various substrate temperatures showed that the sputtering yield decreases with increasing temperature. The Co distribution shift phenomenon was explained using a model incorporating both the temperature dependent sputtering yield effect and the precipitate coarsening effect. This model also provides a consistent picture to explain at least partially and qualitatively the observed opposite trends of Co distribution shift towards the surface or the substrate with increasing substrate temperature reported in the literature.

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Section: Resultssupporting

confidence: 70%