Characterization of buried silicon-nitride formed by nitrogen implantation

Belz, Jürgen; Kaat, E.H. Te; Zimmer, G.; Vogt, H.

doi:10.1016/s0168-583x(87)80057-5

Cited by 24 publications

(3 citation statements)

References 7 publications

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“…(2) 6.9 x 10ls, (4) 1.7 X Solid lines (1) and (3) illustrate theoretical calculations for the same doses determined profiles [30]. As for antimony atom implantation, increasing ion dose shifts the distribution maxinium towards the surface, stabilizes the concentration level, and provides impurity diffusion to considerable depths.…”

Section: Mode Imentioning

confidence: 96%

Self-Annealing in Ion-Implaned Silicon

Komarov

Новиков

1989

Phys. Stat. Sol. (a)

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The main features of self‐annealing implantation in silicon are treated. Generally, high flux density irradiation could be divided into four steps. There are: 1) accumulation of radiation‐induced defects in the crystal matrix; 2) complete or partial amorphization of near surface layer; 3) recrystallization of amorphous layer in further irradiation; 4) formation and stabilization of structural defects in the crystallized layer of the matrix. The peculiarities of implanted atom accumulation kinetics are discussed. The perspective is shown of self‐annealing implantation in a few applications.

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Section: Mode Imentioning

confidence: 96%

Self-Annealing in Ion-Implaned Silicon

Komarov

Новиков

1989

Phys. Stat. Sol. (a)

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“…The properties of these layers strongly dependent on the preparation process [3]. Ion implantation of nitrogen into silicon [4,5,6,7,8] offers a method to produce thin nearsurface or buried dielectric layers depending on the ion energy. A molecule, e.g.…”

mentioning

confidence: 99%

“…Therefore, ion implantations of mono-elemental diatomic molecules are widely used since nearly two decades (e.g. [7,8]), because larger ion currents can be produced for molecular ions than for atomic ions. The N 2 § to N--ratio produced by the ion gun of the 50 kV implanter of the Institut ffir Kernphysik used, e.g., is about 4 to 1 [9].…”

mentioning

confidence: 99%

Molecular ion implantation in silicon

et al. 1997

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Abstract. 15N2+ molecular ions were implanted with 10keV (j = 10 gA/cm 2) under high vacuum conditions close to room temperature in (100) silicon (c-S0 to study the l SN depth distributions, particularly the dependence of peak concentration and dose on the ion fluence. The analysis were performed by the resonant nuclear reaction 15N(p, ~7) 12C (NRA). A maximum peak concentration of 65 at.% was measured. Thin stoichiometric silicon nitride iayers with a thickness of approx, 20nm (15 at.% nitrogen at the specimen surface) were produced by this low-energy implantation of ~ 5N 2 + ions with an ion fluence of 1.5.1017 ions/cm 2. NRA analysis of 38 keV 15N2+ and 19keV lSN+ ion implantations were performed to compare the is N depth distributions. No significant changes in the depth distributions are measured, that means, the molecular 15N 2 + ions are already disintegrated passing the very first atomic layers of the sample during implantation. Non-Rutherford RBS with 4He+ ions and 3.45 MeV was performed in order to confirm the results obtained by NRA.

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Self-annealing in ion-implanted Si and GaAs

Komarov

1991

Vacuum

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Characterization of buried silicon-nitride formed by nitrogen implantation

Cited by 24 publications

References 7 publications

Self-Annealing in Ion-Implaned Silicon

Self-Annealing in Ion-Implaned Silicon

Molecular ion implantation in silicon

Self-annealing in ion-implanted Si and GaAs

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