Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis

Abstract

/npsi/ctrl?lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=fr Access and use of this website and the material on it are subject to the Terms and Conditions set forth at http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://dx.doi.org/10.1016/j.jssc.2013.02.002 Chemistry, 201, pp. 35-40, 2013-02-10 Characterization of carrier states in CuWO4 thin-films at elevated temperatures using conductometric analysis Gonzalez, Carlos M.; Dunford, Jeffrey L.; Du, Xiaomei; Post, Michael L. Abstract: CuWO 4 thin-films were deposited by pulsed laser deposition onto an insulating substrate. The temperature dependence of the electronic conductivity of CuWO 4 thin-films was determined over the 100 °C -500 °C temperature range in a synthetic air atmosphere. Additionally, variations of conductivity at 300°C and 500°C have been measured for oxygen partial pressures (0.1 atm < p(O 2 ) < 0.9 atm) in nitrogen. The apparent activation energy ∆E a for the electrical conduction has been estimated. The study of the temperature effect on the electron transport properties of CuWO 4 thin-films reveals the operation of two temperature-dependent oxygen states. The effect of varying oxygen concentration on the electronic properties is discussed in detail. The electrochemical nature of the operating oxygen states for the 100°C -500 °C temperature range is deduced using a physicochemical model that relates electronic conductivity with oxygen partial pressure and temperature. Journal of Solid State Characterization of Carrier States in CuWO

Facile preparation of CuWO4 porous films and their photoelectrochemical properties

“…For the preparation of films, the most investigated methods are electrodeposition [20] pulsed laser deposition [21], hydrothermal synthesis [22], sputtering deposition [23], and spray pyrolysis [24]. In general, the use of semiconductor oxide films in photocatalytic processes benefits from the porous structure of the films, which allows a better diffusion of the electrolyte and facilitates catalyst removal from the reaction medium after the catalytic process [25].…”

Emergent CuWO4 Photoanodes for Solar Fuel Production: Recent Progress and Perspectives

“…Electrodeposition [14,21] Thermal conversion [39,40] Sol-gel method [26,29,35] Hydrothermal [25] Electrodeposition (J ph 0.2 mA/cm 2 at 1.23 V RHE ) [21] ALD [30] Thermal conversion (J ph 0.33 mA/cm 2 at 1.23 V RHE ) [24] CVD [23] Ultrasonic spray pyrolysis [28] Impulse magnetron co-sputtering [32] PLD [31] Sol-gel (J ph 0.5mA/cm 2 Mo 6+ [44] Mo solid solution Mo 6+ [45][46][47][48] Red shift of photoresponse (from 550 nm to 600 nm) [45] CuW 0.35 Mo 0.65 O 4 /FTO (J ph 1.0 mA/cm 2 at 1.23 V RHE for SA oxidation) [46] Heterojunction and electron transfer layer WO 3 (flat) [49] WO 3 (nanorod) [39] WO 3 (urchin like) [50] SnO 2 [26] BiVO 4 [51] CuWO 4 /flat WO 3 /FTO. ~4 times increment (J ph 0.55 mA/cm 2 at 1.23 V RHE ) [49] Electrocatalyst Co-Pi [26,52,53] Co 3 O 4 [18] FeCoO x [54] MnPO 4 [55] NiWO 4 [56] NiFeO x [57] P-type sulfide (MoS 2 , NbS 2 , NiS x ) [44] MnNCN [58] Ni-Pi [59] Ag [60] Co-Pi/CuWO 4 /FTO, 30% increment (J ph 0.4 mA/cm 2 at 0.6 V Ag/AgCl ) [52] IrCo-Pi [61] Post-treatment H 2 treatment…”

“…C. M. Gonzalez et al [31] proposed pulsed laser deposition (PLD) onto an insulating substrate for synthesizing CuWO 4 thin films. They investigated the temperature dependence of electronic conductivity for CuWO 4 films across the 100-500 • C temperature range.…”