Characterization of Catechins in Water by Photoemission Yield Spectroscopy in Air

Yamashita, Daisuke; Ishizaki, Atsushi

doi:10.2116/analsci.32.577

Cited by 1 publication

(1 citation statement)

References 37 publications

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“…In this paper, we report the effect of NBHs on these properties of an a-Si network, by using the results of transmittance (T) and reflectance (R) measurements, 37) Raman spectroscopy, 10,33,[38][39][40] electrical conductivity measurements under dark and light illumination conditions, 9,12,25,29,41) photoemission yield spectroscopy in air (PYSA), 42,43) and positron annihilation lifetime (PAL) spectroscopy. 20,35,[44][45][46][47][48] The C NBH value was quantitatively determined using the total hydrogen content (C T ) [determined by Rutherford backscattering spectrometry=hydrogen forward scattering (RBS=HFS)], and C BH [determined using Fourier-transform infrared spectroscopy-attenuated total reflection (FTIR-ATR) method].…”

Section: Introductionmentioning

confidence: 99%

Dense restructuring of amorphous silicon network induced by non-bonded hydrogen

Sekimoto¹,

Matsumoto²,

Terakawa³

2018

Jpn. J. Appl. Phys.

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We confirmed the presence of non-bonded hydrogens (NBHs) in hydrogenated amorphous silicon (a-Si:H) films, using a combination of multiple techniques (Rutherford backscattering spectrometry/hydrogen forward scattering, Fourier-transform infrared spectroscopy-attenuated total reflection, and thermal desorption spectrometry). The hydrogen effusion profile of an a-Si:H film with large amounts of NBHs was analyzed in detail. We report the effect of NBHs on band structure and electrical conductivity, and we present additional considerations for previous data on number density of silicon, optical bandgap, and vacancy size distribution [J. Non-Cryst. Solids 447, 207 (2016)]. The effect of NBHs on the a-Si network is explained by the "dense restructuring model".

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