Characterization of CdTe Growth on GaAs Using Different Etching Techniques

Bilgilisoy, Elif; Özden, Selin; Bakali, Emine; Karakaya, Merve; Selamet, Yusuf

doi:10.1007/s11664-015-3830-5

Cited by 12 publications

(11 citation statements)

References 16 publications

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“…Dislocation related defects can be revealed on a film surface by a suitable wet chemical etching method. The methods used to calculate the dislocation densities of as-grown CdTe films were explained in detail in our previous studies [23,24]. For that purpose, the process, named as defect decoration, was carried out in three main steps; oxidation, dissolution, and dilution [25].…”

Section: Experimental Methodsmentioning

confidence: 99%

Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures

Bilgilisoy

Ozceri

Tarhan

2020

Sakarya University Journal of Science

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A three-inch-diameter high quality CdTe thin film was grown on a GaAs (211)B substrate by molecular beam epitaxy (MBE) in ultra-high vacuum conditions. The CdTe/GaAs (211)B heterostructure was then cut into several sample pieces. A few as-grown sample pieces were subjected to chemical etching solutions which created etch pits on the surface. The scanning electron microscopy images of such samples were used to calculate the etch pit densities on the surface. In addition, several as-grown samples were subjected to chemical polishing treatments under different conditions to quantify the removal of O and Te-O structures from the surface. Atomic force microscopy was used to determine as-grown and polished surface morphology and the polish rate of chemical solutions. A study of the surface stoichiometry and the chemical composition of the as-grown and polished CdTe (211)B surfaces were carried out by using Xray photoelectron spectroscopy. Bulk structural qualities of the as-grown and polished samples were studied in terms of the vibrational and phonon modes via confocal Raman spectroscopy. From a comparative analyses of the results, the best chemical polishing conditions for the MBEgrown CdTe (211)B heterostructure were determined.

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Section: Experimental Methodsmentioning

confidence: 99%

Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures

Bilgilisoy

Ozceri

Tarhan

2020

Sakarya University Journal of Science

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“…Full width at half maximum (FWHM) and atomic force microscopy (AFM) roughness were deduced to be 70 arcsec and 4.1 nm, respectively, for the sample being analyzed in this study. On the other hand, measured etch pit density values (EPD) were estimated in the × 1 10 7 cm −2 and × 2 10 8 cm −2 range for our different samples with the help of chemical etching [13]. Moreover, according to Raman spectroscopy, transverse optical (TO) and longitudinal optical (LO) phonon modes of as-grown CdTe thin films were acquired at 145.5 cm −1 and 169.4 cm −1 for our different samples, respectively [13].…”

Section: Quality Of As-grown Cdte Thin Filmsmentioning

confidence: 99%

Reciprocal space mapping study of CdTe epilayer grown by molecular beam epitaxy on (2 1 1)B GaAs substrate

Polat¹,

Arı²,

Öztürk³

et al. 2017

Mater. Res. Express

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Reciprocal space mapping (RSM) has been widely utilized to find out the microstructure and deviations from ideal crystal structures, present in materials ranging from polycrystalline to single-crystalline [1]. RSM can deliver further structural information as compared to conventional methods such as rocking curve (RC) scan due to its two-dimensional (2D) characteristics [2]. This particularly provides a significant advantage when applied to epitaxial thin films having large lattice mismatches. Nondestructive measurement of the threading-dislocation (TD) densities, for instance, relies on prediction of individual parameters, such as domain tilt and twist, of a mosaic layer structure [3]. In addition to the large lattice mismatch, some epitaxial heterostructures have also the low-symmetry surface characteristics. CdTe/(2 1 1)B GaAs is obviously one of the outstanding examples of these types of structures. Structural analysis of the high-index oriented zinc-blende epitaxial layers when combined with the large lattice mismatch becomes much more challenging. Furthermore, the surface normal of epilayer lattice tilts approximately 3° with respect to that of substrate [4]. Each one of these factors make the structure being examined extremely difficult to analyze, especially with the traditional x-ray diffraction (XRD) methods. As a result, a limited number of studies so far have been dedicated to understanding the structural properties of this heterostructure [5][6][7][8]. The common point of all these studies is that they were carried out in real space. However, one advantageous option can be mapping in reciprocal space to characterize such heterostructures. At present, the technique has been separately applied to the high-index orientation [9] or to the large lattice mismatched heterostructures [10].In this letter, the RSM technique is effectively employed to study the lattice tilting, the lattice mismatches, the shear strain produced by the low-symmetry surface and the screw dislocation density of CdTe epilayer grown on (2 1 1) oriented GaAs substrate. Experimental procedure Molecular beam epitaxy (MBE) growth of CdTeThe growth details were similar to those described elsewhere [11,12]. Briefly, CdTe epilayer was grown by molecular beam epitaxy (MBE) system operated in a class 1000 cleanroom environment on a 3-inch epi-ready, semi-insulating (2 1 1)B GaAs wafer after thermal stripping of the oxide layer. Initially, a nucleation layer also

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“…The problem strongly affects the device quality mechanical properties of the infrared diodes. CdTe buffer layers were proposed to overcome such a drawback [30], [31]. However, CdTe buffer layers alter the electrical and optoelectronic properties of the HgCdTe structures.…”

Section: Introductionmentioning

confidence: 99%

“…Previously HgCdTe structures were considered as infrared detectors [29]. However, HgCdTe structures have lattice mismatch problem [30]. The problem strongly affects the device quality [30], [31].…”

Section: Introductionmentioning

confidence: 99%

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INFRARED DETECTING BEHAVIOURS OF Cu2NiSnS4 PHOTODIODES

İlhan

Koç

2020

Kırklareli Üniversitesi Mühendislik Ve Fen Bilimleri Dergisi

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A photodetector in Al/p-Si/Cu2NiSnS4/Al form was fabricated with sol-gel method. The structural assessment of the photodetectors was investigated and Cu2NiSnS4 structures were formed in nanostructure in granular form. Current-time and current-voltage investigations illustrated that Cu2NiSnS4 photodiodes have infrared sensing properties. Photodetection properties such as linear dynamic rate, ideality factor, photosensitivity and photoresponse characteristics were assessed. Results also validate the infrared sensing properties of the diodes. The barrier height of the Cu2NiSnS4 diodes is calculated as 0.466 eV. Ideality factor of the diodes was found to be 5.16. Results indicate that our Cu2NiSnS4 photodetectors are suitable for infrared tracking device applications.

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Characterization of CdTe Growth on GaAs Using Different Etching Techniques

Cited by 12 publications

References 16 publications

Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures

Study of the Effect of Various Chemical Polishing Treatments on MBE-Grown CdTe/GaAs (211)B Heterostructures

Reciprocal space mapping study of CdTe epilayer grown by molecular beam epitaxy on (2 1 1)B GaAs substrate

INFRARED DETECTING BEHAVIOURS OF Cu2NiSnS4 PHOTODIODES

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