Characterization of CMOS sub-65nm metallic contact by laser scattering: Thermal stability of Ni(Si1−xGex)

Arrazat, Brice; Danel, Adrien; Nolot, E.; Favier, S.; Carron, V.; Nemouchi, F.; Hartmann, Jean‐Michel; Rolland, G.; Vandelle, P.; Kermarrec, O.; Campidelli, Y.; Descombes, S.

doi:10.1016/j.mee.2007.05.021

Cited by 9 publications

(8 citation statements)

References 3 publications

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“…cross-hatch with spatial wavelengths in-between 1 and 3 mm). The low-frequency signal, called thereafter ''Haze'', is sensitive to surface properties [19]: Haze=scattered light intensity/incident light intensity (ppm). A systematic edge exclusion equals to 3 cm has been adopted in order to avoid any edge effects.…”

Section: Methodsmentioning

confidence: 99%

Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111)

Destefanis

Hartmann

Abbadie

et al. 2009

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111)

Destefanis

Hartmann

Abbadie

et al. 2009

Journal of Crystal Growth

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“…Absolute haze values typically depend on the material and surface properties, in particular on the film reflectivity; however, relative trends with growth parameters can be reliably interpreted. 25 Haze measurements were complemented by scanning electron microscopy (SEM) and atomic force microscopy (AFM) analysis using a Hitachi SU8000 microscope and a Nanoscope dimension 3100 instrument, respectively. Transmission electron microscopy (TEM) images were acquired in a FEI Tecnai F30 electron microscope operating at 300 kV after focused ion beam sample preparation.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Phase Formation and Morphology of Nickel Silicide Thin Films Synthesized by Catalyzed Chemical Vapor Reaction of Nickel with Silane

et al. 2014

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The synthesis of nickel silicide thin films via a vapor–solid reaction has been studied by exposing thin (10 nm) Ni films to silane (SiH4). The crystalline phases, the Ni/Si stoichiometric ratios, as well as the surface and interface properties of the resulting silicide films were investigated as a function of the growth parameters such as the SiH4 partial pressure, the reaction temperature, and the exposure time. At low temperature (300 °C), SiH4 exposure led to the self-limiting deposition of Si on Ni by catalytic decomposition of SiH4 but not to silicate formation. Between 350 and 400 °C, phase pure orthorhombic NiSi films were obtained that were formed directly without any apparent intermediate Ni-rich silicide phases. A transformation to NiSi2 occurred at 450 °C and above, and at 500 °C phase pure NiSi2 was obtained. Here, the transient formation of NiSi was observed that transformed into NiSi2 for prolonged SiH4 exposure. The results indicate that the Si solubility governs the phase formation sequence whereas kinetics are determined by Ni diffusion and the reaction rate. Resistivity values of 21 and 36 μΩ cm were found for the NiSi and NiSi2 thin films, respectively, corresponding to the values reported for films obtained by solid-state reactions.

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“…Therefore R S degradation is explained by Ge outdiffusion which is accompanied by a film agglomeration. A direct correlation between Ge content in Ni/Si 1-x Ge x system and the morphology of the silicide has been already reported (15). It is shown that layer damages on Si 0.7 Ge 0.3 occur as low as 475°C.…”

Section: Materials Resultsmentioning

confidence: 68%

Evaluation Of Ni(Si_1-xGe_x) and Pt(Si_1-xGe_x) Contact Resistance for FD-SOI PMOS Metallic Source and Drain

et al. 2013

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To improve 20nm FD-SOI pMOS transistor performances, salicide process must be optimized on SiGe source&drain. In this paper, we propose an investigation on Ni and Pt/Si1-xGex (x=0.15, 0.3) systems. In a first part, process window is studied to determine thermal budget domain where the less resistive phase is stable morphologically and thermically. Solid state reactions in terms of phase sequence, thermal stability and morphology have been examined. At high temperature, two kinds of degradations have been observed. In Ni case, Ge out diffusion leads to the film agglomeration. In Pt case, grain coalescence degrades germanosilicide film. In a second part, contact resistivity has been extracted on lateral germanosilicides thanks to new designed structures. After a validation on Pt/Si system, RC extraction has been carried out on Si1-xGex substrate up to 30% of Ge. RC seems to be better with Pt compared to Ni with the same conditions of process optimizations.

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Characterization of CMOS sub-65nm metallic contact by laser scattering: Thermal stability of Ni(Si1−xGex)

Cited by 9 publications

References 3 publications

Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111)

Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111)

Phase Formation and Morphology of Nickel Silicide Thin Films Synthesized by Catalyzed Chemical Vapor Reaction of Nickel with Silane

Evaluation Of Ni(Si_1-xGe_x) and Pt(Si_1-xGe_x) Contact Resistance for FD-SOI PMOS Metallic Source and Drain

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Characterization of CMOS sub-65nm metallic contact by laser scattering: Thermal stability of Ni(Si1−xGex)

Cited by 9 publications

References 3 publications

Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111)

Growth and structural properties of SiGe virtual substrates on Si(100), (110) and (111)

Phase Formation and Morphology of Nickel Silicide Thin Films Synthesized by Catalyzed Chemical Vapor Reaction of Nickel with Silane

Evaluation Of Ni(Si1-xGex) and Pt(Si1-xGex) Contact Resistance for FD-SOI PMOS Metallic Source and Drain

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Evaluation Of Ni(Si_1-xGe_x) and Pt(Si_1-xGe_x) Contact Resistance for FD-SOI PMOS Metallic Source and Drain