Characterization of CMP Slurries Using Densitometry and Refractive Index Measurements

Abstract

We investigated the possibility of employing refractive index (RI) measurements for inline incoming slurry control at the point of use (POU), as an alternative to the widespread densitometry method. As such, it became necessary to determine if RI could detect smaller changes in slurry composition and, therefore, provide a tighter control. Three industrially-relevant silica-based slurries, namely, Fujimi PL-7106, Klebosol 1501-50, and CMC W7801, were characterized using both densitometry and RI measurements. Initial solutions of the three slurries were prepared and increasingly small amounts of ultrapurified water (UPW) were added to study the change in slurry properties. Results showed that both density and RI decreased linearly with the addition of water for all three slurries, with the 1501-50 being the most sensitive to water addition. A linear correlation between the two properties was found, with R2 values that exceeded 0.95 in all cases. Furthermore, the approximate limit of detection of both metrology tools was estimated based on the slope of the fitting line and resolution. When compared to densitometry, RI was found to be the far superior method for detecting smaller changes in water concentration.

Contact-Area-Changeable CMP Conditioning for Enhancing Pad Lifetime

“…In the semiconductor manufacturing process, chemical mechanical polishing (CMP) is becoming more important as the integration of semiconductor devices increases [1][2][3][4][5]. CMP is a process that involves simultaneous chemical reactions and mechanical material removal, enabling the formation of interlayer dielectrics (ILD) [6][7][8], shallow trench isolation (STI) [6,9,10], metal wiring [11][12][13][14], and metal contacts [15][16][17] through the global planarization of thin films. In CMP, a wafer is attached to a carrier, and a polishing pad is attached to a platen, as shown in Figure 1.…”