Wire bonding remains the dominant form of interconnection technology, and is expected to be used in 85% of total IC units worldwide by 2010. As device miniaturization continues, the diameters of wires get finer, requiring higher mechanical strength from the thin wires for handling. However, strong wires with low ductility pose an insurmountable hurdle in manufacturing because of formability issues. Therefore, strategies to attain both high strength and ductility (dual improvement) in Au wires need to be developed, a goal shared by researchers in the field of nanocrystalline (NC) and ultrafine-grained (UFG) materials. The objective of this study is to establish dopant selection criteria (in low ppm level) in Au wires to achieve the goal of dual improvement. In this thesis, the unique effect of Ca on simultaneously improving the strength (by-60%) and ductility (by-96%) of Au wires is demonstrated. Also, Ca is shown to retard high temperature creep by 4-6 times, where the activation energy, stress and grain size exponent all indicate that grain boundary (GB) diffusion mediated GB sliding creep has occurred. Also, the Hall-Petch coefficient is increased-these obvious impacts on GB-related properties have suggested the segregation tendency of Ca in Au wires. The postulation that stacking fault energy (SFE) reduction is the underlying mechanism is confirmed by statistical measurement on stacking fault (SF) width/ density, where SFE is found to be reduced from 15-50 mJ/m to 10-34 mJ/m. The observations viii