Characterization of copper-hydrogen peroxide film growth kinetics

DeNardis, Darren; Rosales-Yeomans, D.; Borucki, L.; Philipossian, Ara

doi:10.1016/j.tsf.2006.02.010

Cited by 40 publications

(22 citation statements)

References 36 publications

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“…The material removal mechanism in the copper CMP is based on a passivation layer formation [26][27][28]. The chemicals in the slurry etch the surface of copper, generating a passivation layer that is easily removed with a mechanical reaction.…”

Section: Chemical Reaction Rate Distributionmentioning

confidence: 99%

A wafer-scale material removal rate profile model for copper chemical mechanical planarization

Lee

Jeong

2011

International Journal of Machine Tools and Manufacture

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Section: Chemical Reaction Rate Distributionmentioning

confidence: 99%

A wafer-scale material removal rate profile model for copper chemical mechanical planarization

Lee

Jeong

2011

International Journal of Machine Tools and Manufacture

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“…Detailed derivation of this copper oxidation model can be found elsewhere. 17 The rate constant for step 1 in the RR model has the following expression…”

Section: ͓7͔mentioning

confidence: 99%

Design and Evaluation of Pad Grooves for Copper CMP

Rosales-Yeomans

DeNardis

Borucki³

et al. 2008

J. Electrochem. Soc.

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Variations in the chemical mechanisms of copper chemical-mechanical planarization ͑CMP͒ can appear due to the effect of pad grooving on ͑i͒ net flow under the wafer, ͑ii͒ pad, wafer, and slurry temperature, and ͑iii͒ reactants and polish debris concentration. Furthermore, changes in the mechanical abrasion of the passive film might appear due to the effect of pad grooving on ͑i͒ slurry film thickness under the wafer, ͑ii͒ friction force at the pad-wafer interface, ͑iii͒ pad compressibility, and ͑iv͒ pad-wafer contact area. The effective transport of slurry in and out of the pad-wafer interface becomes critical particularly for processes in which by-products are detrimental to polishing rates. By combining logarithmic and spiral grooves, paths are created to introduce fresh slurry into, and spent slurry and debris out of, the pad-wafer interface. The experimentally grooved pads were tested and statistically compared to a commercial pad in terms of removal rate ͑RR͒, average coefficient of friction, and average pad leading edge temperature. Also a flat ͑i.e., not grooved͒ pad was included in this study to evaluate in general the effect of pad grooves in copper CMP. The results indicate that the pad achieving the highest relative values for RR, coefficient of friction ͑COF͒, and T p is the one that combines a negatively directed logarithmic groove with a positively directed spiral groove. This pad results in a 24% increase in RR and a 28% increase in COF compared to the concentrically grooved pad. To establish the mechanical and chemical contributions to the process, experimental data were then theoretically evaluated. A three-step model in combination with a previously developed flash heating ͑FH͒ temperature model was proposed for copper CMP. In all cases, the model root-meansquare ͑rms͒ error fell in the range of 322-674 Å/min, while the experimental repeatability error was in the range of 118-1100 Å/min. This model presented an expression to characterize the rate of oxide growth ͑k 1 ͒ and the addition of a third step to characterize the dissolution rate of copper oxide ͑k 3 ͒. The relative values of k 1 and k 2 ͑mechanical rate constant͒ as a function of pV showed that the process was more limited by film removal through mechanical abrasion, especially at low values of pV. However, as pV increased this limitation was reduced and there was a transition to a more balanced process.Interlevel dielectric and metal chemical-mechanical planarization.-In general, chemical-mechanical planarization ͑CMP͒ technology can be divided into two areas, interlevel dielectric ͑ILD͒ and metal CMP; both polishing processes are in some ways similar. 1 The same type of equipment used for dielectric polishing can also be used for metal polishing. The type of pads used in ILD and metal CMP are also similar. However, there are important differences that need to be considered. One of these differences, in fact a very important one, is the chemical effect of the slurry on the substrate to be polished. During ILD CMP, the surface of the wa...

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“…The D-R model assumes a uniform, pore-filling sorption and can predict the free sorption energy change [28][29][30]. The D-R model is written as:…”

Section: Adsorption Isotherms At Different Temperaturesmentioning

confidence: 99%

Removal of Cd(II) from aqueous solution with activated Firmiana Simplex Leaf: Behaviors and affecting factors

Tang

et al. 2010

Journal of Hazardous Materials

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Characterization of copper-hydrogen peroxide film growth kinetics

Cited by 40 publications

References 36 publications

A wafer-scale material removal rate profile model for copper chemical mechanical planarization

A wafer-scale material removal rate profile model for copper chemical mechanical planarization

Design and Evaluation of Pad Grooves for Copper CMP

Removal of Cd(II) from aqueous solution with activated Firmiana Simplex Leaf: Behaviors and affecting factors

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