2006
DOI: 10.1117/12.657343
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Characterization of critical dimension uniformity through in-situ detection of aerial images in a scanner

Abstract: We introduce a novel in-scanner aerial image sampling technique using a sensor wafer that can be loaded into a production scanner to acquire data at the wafer plane, and under exact production conditions in terms of all optical settings and parameters of the actual scanner and an actual reticle. We demonstrate the applicability of this system to CD uniformity characterization of a production scanner in combination with a test reticle. CD estimates can be directly obtained from the image data by applying a fixe… Show more

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“…A more detailed investigation of the sensor wafer system for CD uniformity detection, including across field CD uniformity and prediction of actual resist CDs by addition of a calibrated resist model will be presented elsewhere. 6 Here, a fixed threshold is simply chosen to match approximately the smallest line width to the target, i.e. the drawn CD.…”
Section: B)mentioning
confidence: 99%
“…A more detailed investigation of the sensor wafer system for CD uniformity detection, including across field CD uniformity and prediction of actual resist CDs by addition of a calibrated resist model will be presented elsewhere. 6 Here, a fixed threshold is simply chosen to match approximately the smallest line width to the target, i.e. the drawn CD.…”
Section: B)mentioning
confidence: 99%