Characterization of Crystal Perfection in the Layers of (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructures via the Second Harmonic Generation Method

Dvoretskii, S. A.; Stupak, M. F.; Михайлов, Н. Н.; Makarov, Sergey N.; Elesin, A. G.; Verkhoglyad, A. G.

doi:10.3103/s8756699021050058

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“…In the given data, in the minima of azimuth dependence, beats are observed (highlighted by a dotted oval), which at point I exceed the noise of the measuring path; at point II and III are close to the noise of the measuring path; at point IV correspond to the noise of the measuring path. The beats in the minima of the azimuthal dependence of the second harmonic signal, exceeding the noise of the measuring path, we associate with the misoriented microregions that we observed earlier [30]. In this case, during the transition of measurements from point I to point IV, the amplitude of the beats decreases, which corresponds to a decrease in misoriented microregions and its absence at point 4.…”

Section: The Range Of Measurement Of the Azimutal Dependence Of The S...supporting

confidence: 68%

“…We have conducted studies of the crystal structure of the HES MCT MBE on GaAs substrates by analyzing of the azimuthal dependence of the second harmonic signal of reflected probing laser radiation [30]. For the first time, a quasi-periodic change in the signal in the minimum of the azimuth dependence of the second harmonic was observed over the entire thickness of the MCT layer, exceeding the noise of the receiving path [31].…”

Section: Introductionmentioning

confidence: 99%

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New recombination centers in MBE MCT layers on (013) GaAs substrates

S.A.

M.F.

N.N.

et al. 2023

Physics of the Solid State

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A large inhomogeneity of the minority lifetime from 1 to 10 μs at 77 K over the area is observed in some experiments when high-quality HgCdTe layers of the electronic type of conductivity are grown on GaAs substrates with a diameter of 76.2 mm with the (013) orientation by the method of molecular beam epitaxy. As a rule, the such lifetimes are determined by carrier recombination at Shockley-Hall-Read (SHR) centers. Modern studies and ideas about the nature of the SHR centers do not allow us to explain the observed results. The measurements of HgCdTe layers by the second harmonic generation showed the existence of a quasi-periodic change in the signal at the minima of the azimuthal dependence, which is associated with the appearance of misoriented microregions of the crystal structure. The amplitude of the quasi-periodic change in the signal decreases with increasing lifetime and completely disappears for regions with higher lifetime values. Similar dependences are observed during etching of HgCdTe layers, which indicates the existence of misoriented microregions in the bulk. Thus, misoriented microregions of the crystal structure have a significant effect on the lifetime and are new centers of Shockley-Hall-Read recombination. Keywords: HgCdTe layers, lifetime, second harmonic, azimuthal angular dependences, recombination centers, misoriented microregions.

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Section: The Range Of Measurement Of the Azimutal Dependence Of The S...supporting

confidence: 68%

Section: Introductionmentioning

confidence: 99%