Characterization of crystalline GeSn layer on tensile-strained Ge buffer deposited by magnetron sputtering

Miao, Yuyang; Wang, Yibo; Hu, Huiyong; Liu, Xiangyu; Su, H. B.; Zhang, Jing; Yang, Jiayin; Tang, Zhaohuan; Wu, Xin; Song, Jialin; Rong-Xi, Xuan; Zhang, Heming

doi:10.1016/j.mssp.2018.05.013

Cited by 18 publications

(10 citation statements)

References 30 publications

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“…76 Yuanhao Miao et al prepared tensile strain Ge buffer layer using an eight-wafer reduced pressure chemical vapor deposition system, followed by tensile-strained GeSn layer to reduce the chance of indirect transition and increase the direct one. 77 Z. Kong et al tried to increase the tensile strain and relax the compressive strain caused by the Sn content by surrounding the GeSn with an insulating stressor layer. They prepared the GeSn layer on the Ge/Si virtual substrate and capped it by Al 2 O 3 .…”

Section: Introductionmentioning

confidence: 99%

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Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices

et al. 2022

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Section: Introductionmentioning

confidence: 99%

“…77 Z.Kong et al tried to increase the tensile strain and relax the compressive strain caused by the Sn content by surrounding the GeSn with an insulating stressor layer. They prepared the GeSn layer on the Ge/Si virtual substrate and capped it by Al 2 O 3 .…”

mentioning

confidence: 99%

Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices

et al. 2022

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“…This approach is created due to the potential of Ge for optoelectronics applications, such as low-threshold Ge lasers [4,5], high-performance Ge photodetectors [6,7], high-performance Ge modulators [8,9], and Nanomaterials 2021, 11, 1421 2 of 13 high-mobility Ge electronic devices [10][11][12], etc. Furthermore, Ge buffer layers can also be regarded as a feasible platform for the growth of large lattice mismatch materials such as GaAs [13][14][15], InP [16,17], GeSn [18][19][20] on Si, which makes other novel optoelectronic devices on Si possible.…”

Section: Introductionmentioning

confidence: 99%

Strain Modulation of Selectively and/or Globally Grown Ge Layers

Wang

Miao

et al. 2021

Nanomaterials

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This article presents a novel method to grow a high-quality compressive-strain Ge epilayer on Si using the selective epitaxial growth (SEG) applying the RPCVD technique. The procedures are composed of a global growth of Ge layer on Si followed by a planarization using CMP as initial process steps. The growth parameters of the Ge layer were carefully optimized and after cycle-annealing treatments, the threading dislocation density (TDD) was reduced to 3 × 107 cm−2. As a result of this process, a tensile strain of 0.25% was induced, whereas the RMS value was as low as 0.81 nm. Later, these substrates were covered by an oxide layer and patterned to create trenches for selective epitaxy growth (SEG) of the Ge layer. In these structures, a type of compressive strain was formed in the SEG Ge top layer. The strain amount was −0.34%; meanwhile, the TDD and RMS surface roughness were 2 × 106 cm−2 and 0.68 nm, respectively. HRXRD and TEM results also verified the existence of compressive strain in selectively grown Ge layer. In contrast to the tensile strained Ge layer (globally grown), enhanced PL intensity by a factor of more than 2 is partially due to the improved material quality. The significantly high PL intensity is attributed to the improved crystalline quality of the selectively grown Ge layer. The change in direct bandgap energy of PL was observed, owing to the compressive strain introduced. Hall measurement shows that a selectively grown Ge layer possesses room temperature hole mobility up to 375 cm2/Vs, which is approximately 3 times larger than that of the Ge (132 cm2/Vs). Our work offers fundamental guidance for the growth of high-quality and compressive strain Ge epilayer on Si for future Ge-based optoelectronics integration applications.

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“…The smaller surface free energy of Sn compared to that of Ge makes Sn more likely to immigrate to the surface of the GeSn film during epitaxial growth and thermal treatment [7,8,9,10,11]. So far, several techniques such as chemical vapor deposition (CVD) [12,13,14], molecular beam epitaxy (MBE) [15,16,17], and magnetron sputtering [18,19,20,21,22] have been employed to achieve the crystalline GeSn layers.…”

Section: Introductionmentioning

confidence: 99%

“…In addition, crystalline GeSn thin films with a high Sn content (28%) were also deposited on low-Sn-composition GeSn buffer layers using sputtering epitaxy [20]. Our previous work showed the deposition of GeSn on a tensile-strained Ge buffer with a low Sn content (3%), and the room temperature photoluminescence spectrum was observed [21]. However, no room temperature photoluminescence spectrum or GeSn-based diode were reported for a higher Sn composition GeSn alloy deposited by this method.…”

Section: Introductionmentioning

confidence: 99%

High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-Temperature Magnetron Sputtering for Optoelectronic Application

Yang

Miao

et al. 2019

Materials

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In this paper, a high-quality sputtered-GeSn layer on Ge (100) with a Sn composition up to 7% was demonstrated. The crystallinity of the GeSn layer was investigated via high-resolution X-ray diffraction (HR-XRD) and the strain relaxation degree of the GeSn layer was evaluated to be approximately 50%. A novel method was also proposed to evaluate the averaged threading dislocation densities (TDDs) in the GeSn layer, which was obtained from the rocking curve of GeSn layer along the (004) plane. The photoluminescence (PL) measurement result shows the significant optical emission (1870 nm) from the deposited high-quality GeSn layer. To verify whether our deposited GeSn can be used for optoelectronic devices, we fabricated the simple vertical p-i-n diode, and the room temperature current–voltage (I–V) characteristic was obtained. Our work paves the way for future sputtered-GeSn optimization, which is critical for optoelectronic applications.

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Characterization of crystalline GeSn layer on tensile-strained Ge buffer deposited by magnetron sputtering

Cited by 18 publications

References 30 publications

Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices

Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices

Strain Modulation of Selectively and/or Globally Grown Ge Layers

High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-Temperature Magnetron Sputtering for Optoelectronic Application

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